NGB8206AN Description
NGB8206N, NGB8206AN Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT).
NGB8206AN Applications
- Ideal for Coil−on−Plug and Driver−on−Coil Applications
- Gate−Emitter ESD Protection
- Part: NGB8206AN
- Manufacturer: onsemi (official site)
- Size: 117.26 KB
