NGD8201B
NGD8201B is Ignition IGBT manufactured by onsemi.
Ignition IGBT, 20 A, 400 V
N- Channel DPAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) Features monolithic circuitry integrating ESD and Over- Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.
Features
- Ideal for Coil- on- Plug Applications
- DPAK Package Offers Smaller Footprint for Increased Board Space
- Gate- Emitter ESD Protection
- Temperature pensated Gate- Collector Voltage Clamp Limits
Stress Applied to Load
- Integrated ESD Diode Protection
- New Design Increases Unclamped Inductive Switching (UIS) Energy
Per Area
- Low Threshold Voltage Interfaces Power Loads to Logic or
Microprocessor Devices
- Low Saturation Voltage
- High Pulsed Current Capability
- Emitter Ballasting for Short- Circuit Capability
- These are Pb- Free Devices
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Collector- Emitter Voltage
Collector- Gate Voltage
Gate- Emitter Voltage
Collector Current- Continuous @ TC = 25°C
- Pulsed
ESD (Human Body Model) R = 1500 Ω, C = 100 p F
VCES VCER VGE
430 VDC
430...
