NGTB30N65IHL2WG - IGBT

Datasheet Summary

Features

a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching.

ON Semiconductor

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Datasheet Details

Part number	NGTB30N65IHL2WG
Manufacturer	ON Semiconductor
File Size	156.28 KB
Description	IGBT
Datasheet	NGTB30N65IHL2WG Datasheet
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NGTB30N65IHL2WG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.

Published: Oct 2, 2022 |