NJVMJB45H11 Datasheet | onsemi

Features http://onsemi. SILICON POWER TRANSISTORS 10 AMPERES, 80 VOLTS, 50 WATTS MARKING DIAGRAM - Low Collector- Emitter Saturation Voltage - - - - - - - VCE(sat) = 1.0 V (Max) @ 8.0 A Fast Switching Speeds plementary Pairs Simplifies Designs Epoxy Meets UL 94 V- 0 @ 0.125 in ESD Ratings: Human Body Model, 3B > 8000 V Machine Model, C > 400 V NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC- Q101 Qualified and PPAP Capable Pb- Free Packages are Available D2PAK CASE 418B STYLE 1 B4x H11G AYWW x A Y WW G = 4 or 5 = Assembly Location = Year = Work Week = Pb- Free Package MAXIMUM RATINGS Rating Collector- Emitter Voltage Emitter- Base Voltage Collector Current - Continuous - Peak Symbol VCEO VEB IC PD Value 80 5 10 20 50 0.4 2.0 0.016 - 55 to 150 Unit Vdc Vdc Adc ORDERING INFORMATION Device MJB44H11G MJB44H11T4G NJVMJB44H11T4G W W/°C W W/°C °C MJB45H11G MJB45H11T4G NJVMJB45H11T4G Package D2PAK (Pb- Free) D2PAK (Pb- Free) D2PAK (Pb- Free) D2PAK (Pb- Free) D2PAK (Pb- Free) D2PAK (Pb- Free) 800/Tape & Reel 800/Tape & Reel 50 Units/Rail 800/Tape & Reel 800/Tape & Reel Shipping† 50 Units/Rail Total Power Dissipation @ TC = 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Junction Temperature Range TJ, Tstg THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction- to- Case Thermal Resistance, Junction- to- Ambient Symbol Rq JC Rq JA Max 2.5 75 Unit °C/W °C/W †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Remended Operating Conditions is not implied. Extended exposure to stresses above the Remended Operating Conditions may affect device reliability. 1 Publication Order Number: MJB44H11/D Free Datasheet...