NJVMJD3055T4G Datasheet | onsemi

ures http://onsemi. SILICON POWER TRANSISTORS 10 AMPERES 60 VOLTS, 20 WATTS - Lead Formed for Surface Mount Applications in Plastic Sleeves - - - - - - - - (No Suffix) Straight Lead Version in Plastic Sleeves (“- 1” Suffix) Electrically Similar to MJE2955 and MJE3055 DC Current Gain Specified to 10 Amperes High Current Gain- Bandwidth Product - f T = 2.0 MHz (Min) @ IC = 500 m Adc Epoxy Meets UL 94 V- 0 @ 0.125 in ESD Ratings:  Human Body Model, 3B > 8000 V  Machine Model, C > 400 V NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC- Q101 Qualified and PPAP Capable These are Pb- Free Packages- DPAK CASE 369C STYLE 1 IPAK CASE 369D STYLE 1 MARKING DIAGRAMS AYWW J xx55G DPAK A Y WW Jxx55 G AYWW J xx55G IPAK = Assembly Location = Year = Work Week = Device Code x = 29 or 30 = Pb- Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. - For additional information on our Pb- Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.  Semiconductor ponents Industries, LLC, 2012 February, 2012 - Rev. 12 Publication Order Number: MJD2955/D Free Datasheet http://../ MJD2955, NJVMJD2955T4G (PNP) MJD3055, NJVMJD3055T4G (NPN) MAXIMUM RATINGS Rating Collector- Emitter Voltage Collector- Base Voltage Emitter- Base Voltage Collector Current Base Current Total Power Dissipation @ TC = 25C Derate above 25C Total Power Dissipation (Note 1) @ TA = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCB VEB IC IB PD{ Max 60 70 5 10 6 20 0.16 1.75 0.014 - 55 to +150 Unit Vdc Vdc Vdc Adc Adc W W/C W W/C C TJ, Tstg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Remended Operating Conditions is not implied. Extended exposure to stresses...