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  ON Semiconductor Electronic Components Datasheet  

NJW44H11G Datasheet

Power Transistors

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NJW44H11G
80 V NPN, 10 A
Power Transistor
These series of plastic, silicon NPN power transistors can be used as
general purpose power amplification and switching such as output or
driver stages in applications such as switching regulators, converters
and power amplifiers.
Features
Fast Switching Speeds
High Frequency
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Benefits
Reliable Performance at Higher Powers
Symmetrical Characteristics in Complementary Configurations
Accurate Reproduction of Input Signal
Greater Dynamic Range
High Amplifier Bandwidth
Applications
Highend Consumer Audio Products
Home Amplifiers
Home Receivers
MAXIMUM RATINGS (TA = 25°C)
Rating
CollectorEmitter Voltage
EmitterBase Voltage
Collector Current Continuous
Collector Current Peak (Note 1)
Total Power Dissipation @ TC = 25°C
THERMAL CHARACTERISTICS
Symbol
VCEO
VEBO
IC
ICM
PD
Max Unit
80 Vdc
5.0 Vdc
10 A
20 A
120 Watts
Characteristic
Symbol Max Unit
Thermal Resistance, Junction to Case
Junction and Storage Temperature
Range
RqJC
TJ, Tstg
1.04
65 to
+150
°C/W
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
80 VOLT, 10 AMPS
NPN POWER TRANSISTORS
NPN
COLLECTOR 2, 4
1
BASE
EMITTER 3
MARKING
4 DIAGRAM
NJWxxxG
AYWW
1 23
xxx
G
A
Y
WW
TO3P
PLASTIC
CASE 340AB
12
= TBD
= PbFree Package
= Assembly Location
= Year
= Work Week
3
ORDERING INFORMATION
Device
NJW44H11G
Package
TO3P
(PbFree)
Shipping
30 Units/Rail
© Semiconductor Components Industries, LLC, 2013
September, 2013 Rev. 0
1
Publication Order Number:
NJW44H11/D


  ON Semiconductor Electronic Components Datasheet  

NJW44H11G Datasheet

Power Transistors

No Preview Available !

NJW44H11G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage
(IC = 30 mAdc, IB = 0)
CollectorCutoff Current
(VCE = Rated VCEO, VBE = 0)
Emitter Cutoff Current
(VBE = 5.0 Vdc)
VCEO
80
Vdc
ICES
10 mAdc
IEBO
10 mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 2 A, VCE = 2 V)
(IC = 4 A, VCE = 2 V)
CollectorEmitter Saturation Voltage
(IC = 8 A, IB = 400 mA)
BaseEmitter Turnon Voltage
(IC = 8 A, VCE = 2.0 V)
hFE
100 400
80 320
VCE(sat)
1.0 V
VBE(on)
1.5 V
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 10 V, f = 1.0 MHz)
Cutoff Frequency
(IC = 500 mA, VCE = 5 V, f = 1.0 MHz)
Cobo
65
pF
fT 85 MHz
SWITCHING TIMES
Delay and Rise Times
(IC = 5.0 Adc, IB1 = 0.5 A)
Storage Time
(IC = 5.0 Adc, IB1 = IB2 = 0.5 A)
Fall Time
(IC = 5.0 Adc, IB1 = IB2 = 0.5 A)
td + tr
300
ts 500
tf 140
ns
ns
ns
http://onsemi.com
2


Part Number NJW44H11G
Description Power Transistors
Maker ON Semiconductor
Total Page 5 Pages
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