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  ON Semiconductor Electronic Components Datasheet  

NLU1GT04 Datasheet

Single Inverter

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NLU1GT04
Single Inverter, TTL Level
LSTTL−Compatible Inputs
The NLU1GT04 MiniGatet is an advanced CMOS high−speed
inverting buffer in ultra−small footprint.
The device input is compatible with TTL−type input thresholds and
the output has a full 5.0 V CMOS level output swing.
The NLU1GT04 input and output structures provide protection
when voltages up to 7 V are applied, regardless of the supply voltage.
Features
High Speed: tPD = 3.8 ns (Typ) @ VCC = 5.0 V
Low Power Dissipation: ICC = 1 mA (Max) at TA = 25°C
TTL−Compatible Input: VIL = 0.8 V; VIH = 2.0 V
CMOS−Compatible Output:
VOH > 0.8 VCC; VOL < 0.1 VCC @ Load
Power Down Protection Provided on inputs
Balanced Propagation Delays
Ultra−Small Packages
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
NC 1
6 VCC
IN A 2
5 NC
GND 3
4 OUT Y
Figure 1. Pinout (Top View)
IN A 1 OUT Y
Figure 2. Logic Symbol
www.onsemi.com
MARKING
DIAGRAMS
UDFN6
MU SUFFIX
M
CASE 517AA
1
UDFN6
MU SUFFIX
CASE 517AQ
PM
1
N or P = Device Marking
M = Date Code
PIN ASSIGNMENT
1 NC
2 IN A
3 GND
4 OUT Y
5 NC
6 VCC
FUNCTION TABLE
AY
LH
HL
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
June, 2016 − Rev. 3
1
Publication Order Number:
NLU1GT04/D


  ON Semiconductor Electronic Components Datasheet  

NLU1GT04 Datasheet

Single Inverter

No Preview Available !

NLU1GT04
MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCC
VIN
VOUT
IIK
IOK
IO
ICC
IGND
TSTG
TL
TJ
MSL
DC Supply Voltage
DC Input Voltage
DC Output Voltage
DC Input Diode Current
DC Output Diode Current
DC Output Source/Sink Current
DC Supply Current Per Supply Pin
DC Ground Current per Ground Pin
Storage Temperature Range
Lead Temperature, 1 mm from Case for 10 Seconds
Junction Temperature Under Bias
Moisture Sensitivity
VIN < GND
VOUT < GND
−0.5 to +7.0
−0.5 to +7.0
−0.5 to +7.0
−20
±20
±12.5
±25
±25
−65 to +150
260
150
Level 1
V
V
V
mA
mA
mA
mA
mA
°C
°C
°C
FR
VESD
Flammability Rating Oxygen
ESD Withstand Voltage
Index: 28 to 34
Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
UL 94 V−0 @ 0.125 in
> 2000
> 200
N/A
V
ILATCHUP Latchup Performance Above VCC and Below GND at 125 °C (Note 5)
±500
mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2 ounce copper trace no air flow.
2. Tested to EIA / JESD22−A114−A.
3. Tested to EIA / JESD22−A115−A.
4. Tested to JESD22−C101−A.
5. Tested to EIA / JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min Max Unit
VCC Positive DC Supply Voltage
1.65 5.5 V
VIN Digital Input Voltage
0 5.5 V
VOUT Output Voltage
0 5.5 V
TA Operating Free−Air Temperature
−55
+125
°C
Dt/DV Input Transition Rise or Fall Rate
VCC = 3.3 V ± 0.3 V
VCC = 5.0 V ± 0.5 V
0 100 ns/V
0 20
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
www.onsemi.com
2


Part Number NLU1GT04
Description Single Inverter
Maker ON Semiconductor
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