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  ON Semiconductor Electronic Components Datasheet  

NLU1GT125 Datasheet

Non-Inverting 3-State Buffer

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NLU1GT125
Non-Inverting 3-State
Buffer, TTL Level
LSTTLCompatible Inputs
The NLU1GT125 MiniGatet is an advanced CMOS highspeed
noninverting buffer in ultrasmall footprint.
The NLU1GT125 requires the 3state control input OE to be set
High to place the output in the high impedance state.
The device input is compatible with TTLtype input thresholds and
the output has a full 5.0 V CMOS level output swing.
The NLU1GT125 input and output structures provide protection
when voltages up to 7.0 V are applied, regardless of the supply voltage.
Features
High Speed: tPD = 3.8 ns (Typ) @ VCC = 5.0 V
Low Power Dissipation: ICC = 1 mA (Max) at TA = 25°C
TTLCompatible Input: VIL = 0.8 V; VIH = 2.0 V
CMOSCompatible Output:
VOH > 0.8 VCC; VOL < 0.1 VCC @ Load
Power Down Protection Provided on inputs
Balanced Propagation Delays
UltraSmall Packages
NLV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ100
Qualified and PPAP Capable
These are PbFree Devices
OE 1
6 VCC
IN A 2
5 NC
www.onsemi.com
MARKING
DIAGRAMS
UDFN6
1.2 x 1.0
7M
CASE 517AA
1
UDFN6
1.0 x 1.0
CASE 517BX
LM
1
UDFN6
1.45 x 1.0
CASE 517AQ
DM
1
7 = Device Marking
M = Date Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 4 of
this data sheet.
GND 3
4 OUT Y
Figure 1. Pinout (Top View)
OE
IN A
OUT Y
Figure 2. Logic Symbol
FUNCTION TABLE
Input
A OE
Output
Y
LL
HL
XH
L
H
Z
PIN ASSIGNMENT
1 OE
2 IN A
3 GND
4 OUT Y
5 NC
6 VCC
© Semiconductor Components Industries, LLC, 2016
July, 2016 Rev. 6
1
Publication Order Number:
NLU1GT125/D


  ON Semiconductor Electronic Components Datasheet  

NLU1GT125 Datasheet

Non-Inverting 3-State Buffer

No Preview Available !

NLU1GT125
MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCC
VIN
VOUT
IIK
IOK
IO
ICC
IGND
TSTG
TL
TJ
MSL
DC Supply Voltage
DC Input Voltage
DC Output Voltage
DC Input Diode Current
DC Output Diode Current
DC Output Source/Sink Current
DC Supply Current Per Supply Pin
DC Ground Current per Ground Pin
Storage Temperature Range
Lead Temperature, 1 mm from Case for 10 Seconds
Junction Temperature Under Bias
Moisture Sensitivity
VIN < GND
VOUT < GND
0.5 to +7.0
0.5 to +7.0
0.5 to +7.0
20
±20
±12.5
±25
±25
65 to +150
260
150
Level 1
V
V
V
mA
mA
mA
mA
mA
°C
°C
°C
FR Flammability Rating
Oxygen Index: 28 to 34
UL 94 V0 @ 0.125 in
ILATCHUP Latchup Performance Above VCC and Below GND at 125°C (Note 2)
±500
mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Measured with minimum pad spacing on an FR4 board, using 10 mmby1 inch, 2 ounce copper trace no air flow.
2. Tested to EIA / JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
VCC
VIN
VOUT
TA
Dt/DV
Positive DC Supply Voltage
Digital Input Voltage
Output Voltage
Operating FreeAir Temperature
Input Transition Rise or Fall Rate
VCC = 3.3 V ± 0.3 V
VCC = 5.0 V ± 0.5 V
Min Max Unit
1.65 5.5 V
0 5.5 V
0 5.5 V
55
+125
°C
0 100 ns/V
0 20
www.onsemi.com
2


Part Number NLU1GT125
Description Non-Inverting 3-State Buffer
Maker ON Semiconductor
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