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  ON Semiconductor Electronic Components Datasheet  

NLU1GT50 Datasheet

Single Buffer

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NLU1GT50
Single Buffer,
Non-Inverting, TTL Level
TTLCompatible Inputs
The NLU1GT50 MiniGatet is an advanced CMOS highspeed
noninverting buffer in ultrasmall footprint.
The device input is compatible with TTLtype input thresholds and
the output has a full 5.0 V CMOS level output swing.
The NLU1GT50 input and output structures provide protection
when voltages up to 7.0 V are applied, regardless of the supply
voltage.
Features
Designed for 1.65 to 5.5 V VCC Operation
High Speed: tPD = 3.5 ns (Typ) @ VCC = 5.0 V
Low Power Dissipation: ICC = 1 mA (Max) at TA = 25°C
TTLCompatible Input: VIL = 0.8 V; VIH = 2.0 V, VCC = 5.0 V
CMOSCompatible Output:
VOH > 0.8 VCC; VOL < 0.1 VCC @ Load
Power Down Protection Provided on inputs
Balanced Propagation Delays
UltraSmall Packages
These are PbFree Devices
NC 1
6 VCC
IN A 2
5 NC
GND 3
4 OUT Y
Figure 1. Pinout (Top View)
IN A 1 OUT Y
Figure 2. Logic Symbol
FUNCTION TABLE
AY
LL
HH
PIN ASSIGNMENT
1 NC
2 IN A
3 GND
4 OUT Y
5 NC
6 VCC
www.onsemi.com
MARKING
DIAGRAMS
UDFN6
MU SUFFIX
LM
CASE 517AA
1
ULLGA6
1.0 x 1.0
LM
1 CASE 613AD
ULLGA6
1.45 x 1.0
LM
CASE 613AF
1
UDFN6
1.0 x 1.0
CASE 517BX
VM
1
UDFN6
1.45 x 1.0
CASE 517AQ
RM
1
L = Device Marking
M = Date Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 4 of
this data sheet.
© Semiconductor Components Industries, LLC, 2016
June, 2016 Rev. 5
1
Publication Order Number:
NLU1GT50/D


  ON Semiconductor Electronic Components Datasheet  

NLU1GT50 Datasheet

Single Buffer

No Preview Available !

NLU1GT50
MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCC
VIN
VOUT
IIK
IOK
IO
ICC
IGND
TSTG
TL
TJ
MSL
DC Supply Voltage
DC Input Voltage
DC Output Voltage
DC Input Diode Current
DC Output Diode Current
DC Output Source/Sink Current
DC Supply Current Per Supply Pin
DC Ground Current per Ground Pin
Storage Temperature Range
Lead Temperature, 1 mm from Case for 10 Seconds
Junction Temperature Under Bias
Moisture Sensitivity
VIN < GND
VOUT < GND
0.5 to +7.0
0.5 to +7.0
0.5 to +7.0
20
±20
±12.5
±25
±25
65 to +150
260
150
Level 1
V
V
V
mA
mA
mA
mA
mA
°C
°C
°C
FR
VESD
Flammability Rating Oxygen
ESD Withstand Voltage
Index: 28 to 34
Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
UL 94 V0 @ 0.125 in
> 2000
> 200
N/A
V
ILATCHUP1 Latchup Performance Above VCC and Below GND at 125 °C (Note 5)
±500
mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Measured with minimum pad spacing on an FR4 board, using 10 mmby1 inch, 2 ounce copper trace no air flow.
2. Tested to EIA / JESD22A114A.
3. Tested to EIA / JESD22A115A.
4. Tested to JESD22C101A.
5. Tested to EIA / JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
VCC
VIN
VOUT
TA
Dt/DV
Positive DC Supply Voltage
Digital Input Voltage
Output Voltage
Operating FreeAir Temperature
Input Transition Rise or Fall Rate
VCC = 3.3 V ± 0.3 V
VCC = 5.0 V ± 0.5 V
Min Max Unit
1.65 5.5 V
0 5.5 V
0 5.5 V
55
+125
°C
0 100 ns/V
0 20
www.onsemi.com
2


Part Number NLU1GT50
Description Single Buffer
Maker ON Semiconductor
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