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  ON Semiconductor Electronic Components Datasheet  

NRVBAF360T3G Datasheet

Surface Mount Schottky Power Rectifier

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NRVBAF360T3G pdf
MBRAF360T3G,
NRVBAF360T3G
Surface Mount
Schottky Power Rectifier
This device employs the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity protection diodes in surface mount
applications where compact size and weight are critical to the system.
Features
Low Profile Package for Space Constrained Applications
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
150°C Operating Junction Temperature
Guard−Ring for Stress Protection
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These are Pb−Free and Halide−Free Devices
Mechanical Charactersistics
Case: Epoxy, Molded, Epoxy Meets UL 94, V−0
Weight: 95 mg (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Cathode Polarity Band
Device Meets MSL 1 Requirements
ESD Ratings: Machine Model = C
ESD Ratings: Human Body Model = 3B
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
3.0 AMPERE
60 VOLTS
SMA−FL
CASE 403AA
STYLE 6
MARKING DIAGRAM
AYWW
RAHG
G
RAH = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
MBRAF360T3G SMA−FL 5000 / Tape & Reel
(Pb−Free)
NRVBAF360T3G SMA−FL 5000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
April, 2014 − Rev. 2
1
Publication Order Number:
MBRAF360/D


  ON Semiconductor Electronic Components Datasheet  

NRVBAF360T3G Datasheet

Surface Mount Schottky Power Rectifier

No Preview Available !

NRVBAF360T3G pdf
MBRAF360T3G, NRVBAF360T3G
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz) TC = 125°C
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
60
3.0 @ TL = 100°C
4.0 @ TL = 80°C
6
125
V
A
A
A
Storage Temperature Range
Tstg − 65 to +150
°C
Operating Junction Temperature (Note 1)
TJ − 65 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Lead (Note 2)
Thermal Resistance, Junction−to−Ambient (Note 2)
2. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board.
Symbol
RqJL
RqJA
Value
25
90
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Maximum Instantaneous Forward Voltage (Note 3)
(iF = 3.0 A, TJ = 25°C)
VF
0.63
V
Maximum Instantaneous Reverse Current (Note 3)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 100°C)
iR mA
0.03
3.0
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
10
TJ = 150°C
TJ = 175°C
1
TJ = 100°C
0.1
TJ = 25°C
TJ = −40°C
0.01
0.0 0.2 0.4 0.6 0.8
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Forward Voltage
10
TJ = 175°C
1
TJ = 150°C
0.1 TJ = 100°C
TJ = 25°C
TJ = −40°C
0.01
0.0 0.2 0.4 0.6 0.8
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 2. Maximum Forward Voltage
http://onsemi.com
2


Part Number NRVBAF360T3G
Description Surface Mount Schottky Power Rectifier
Maker ON Semiconductor
Total Page 5 Pages
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