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  ON Semiconductor Electronic Components Datasheet  

NRVBB30H30CT-1G Datasheet

Switch-mode Power Rectifiers

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MBRB30H30CT-1G,
NRVBB30H30CT-1G,
MBR30H30CTG
Switch-mode
Power Rectifiers
30 V, 30 A
Features and Benefits
Low Forward Voltage
Low Power Loss/High Efficiency
High Surge Capacity
150°C Operating Junction Temperature
30 A Total (15 A Per Diode Leg)
Guard−Ring for Stress Protection
NRVBB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
Applications
Power Supply − Output Rectification
Power Management
Instrumentation
Mechanical Characteristics:
Case: Epoxy, Molded
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight: 1.5 Grams (I2PAK) (Approximately)
1.9 Grams (TO−220) (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
www.onsemi.com
SCHOTTKY BARRIER
RECTIFIER
30 AMPERES, 30 VOLTS
1
2, 4
3
4 MARKING
DIAGRAMS
1 23
I2PAK (TO−262)
CASE 418D
STYLE 3
AYWW
B30H30G
AKA
4
1
2
3
TO−220
CASE 221A
STYLE 6
AYWW
B30H30G
AKA
A = Assembly Location
Y = Year
WW = Work Week
B30H30 = Device Code
G = Pb−Free Package
AKA = Diode Polarity
ORDERING AND MARKING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 6
1
Publication Order Number:
MBRB30H30CT−1/D


  ON Semiconductor Electronic Components Datasheet  

NRVBB30H30CT-1G Datasheet

Switch-mode Power Rectifiers

No Preview Available !

MBRB30H30CT−1G, NRVBB30H30CT−1G, MBR30H30CTG
MAXIMUM RATINGS (Per Diode Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR) TC = 138°C
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz)
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
30
15
30
260
V
A
A
A
Operating Junction Temperature (Note 1)
Storage Temperature
Voltage Rate of Change (Rated VR)
Controlled Avalanche Energy (see test conditions in Figures 9 and 10)
ESD Ratings:
Machine Model = C
Human Body Model = 3B
TJ
Tstg
dv/dt
WAVAL
−55 to +150
*55 to +150
10,000
250
> 400
> 8000
°C
°C
V/ms
mJ
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Rating
Maximum Thermal Resistance
Junction−to−Case
Junction−to−Ambient
Symbol
RqJC
RqJA
Value
2.0
70
Unit
°C/W
ELECTRICAL CHARACTERISTICS (Per Diode Leg)
Rating
Symbol
Value
Unit
Maximum Instantaneous Forward Voltage (Note 2)
(IF = 15 A, TC = 25°C)
(IF = 15 A, TC = 125°C)
(IF = 30 A, TC = 25°C)
(IF = 30 A, TC = 125°C)
vF V
0.48
0.40
0.55
0.53
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, TC = 25°C)
(Rated DC Voltage, TC = 125°C)
iR mA
0.8
130
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
www.onsemi.com
2


Part Number NRVBB30H30CT-1G
Description Switch-mode Power Rectifiers
Maker ON Semiconductor
Total Page 7 Pages
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