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  ON Semiconductor Electronic Components Datasheet  

NRVBB41H100CT Datasheet

Switch-mode Power Rectifier

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MBR41H100CT,
NRVBB41H100CT Series
Switch-mode
Power Rectifier
100 V, 40 A
Features and Benefits
Low Forward Voltage: 0.67 V @ 125°C
Low Power Loss/High Efficiency
High Surge Capacity
175°C Operating Junction Temperature
40 A Total (20 A Per Diode Leg)
Guard−Ring for Stress Protection
NRVBB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MBR41H100CTH and MBRB41H100CT−1H are Halide−Free
Applications
Power Supply − Output Rectification
Power Management
Instrumentation
Mechanical Characteristics:
Case: Epoxy, Molded
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight (Approximately): 1.9 Grams (TO−220)
1.7 Grams (D2PAK)
1.5 Grams (TO−262)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
www.onsemi.com
1
2, 4
3
4 MARKING
DIAGRAMS
1
2
3
1
3
4
TO−220
CASE 221A
STYLE 6
AYWW
B41H100x
AKA
4 D2PAK 3
CASE 418B
STYLE 3
AYWW
B41H100G
AKA
I2PAK (TO−262)
CASE 418D
STYLE 3
AYWW
B41H100x
AKA
1 23
A = Assembly Location
Y = Year
WW = Work Week
x = G or H
G = Pb−Free Package
H = Halide−Free Package
AKA = Polarity Designator
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 9
1
Publication Order Number:
MBR41H100CT/D


  ON Semiconductor Electronic Components Datasheet  

NRVBB41H100CT Datasheet

Switch-mode Power Rectifier

No Preview Available !

MBR41H100CT, NRVBB41H100CT Series
MAXIMUM RATINGS (Per Diode Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR) TC = 150°C
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz) TC = 145°C
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
100
20
40
350
V
A
A
A
Operating Junction Temperature (Note 1)
Storage Temperature
Voltage Rate of Change (Rated VR)
Controlled Avalanche Energy (see test conditions in Figures 10 and 11)
ESD Ratings:
Machine Model = C
Human Body Model = 3B
TJ
Tstg
dv/dt
WAVAL
+175
*65 to +175
10,000
400
> 400
> 8000
°C
°C
V/ms
mJ
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS (Per Diode Leg)
Characteristic
Maximum Thermal Resistance
Junction−to−Case
Junction−to−Ambient
Symbol
RqJC
RqJA
Value
2.0
70
Unit
°C/W
ELECTRICAL CHARACTERISTICS (Per Diode Leg)
Characteristic
Symbol
Value
Unit
Maximum Instantaneous Forward Voltage (Note 2)
(IF = 20 A, TC = 25°C)
(IF = 20 A, TC = 125°C)
(IF = 40 A, TC = 25°C)
(IF = 40 A, TC = 125°C)
vF V
0.80
0.67
0.90
0.76
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, TC = 125°C)
(Rated DC Voltage, TC = 25°C)
iR mA
10
0.01
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
www.onsemi.com
2


Part Number NRVBB41H100CT
Description Switch-mode Power Rectifier
Maker ON Semiconductor
Total Page 9 Pages
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