Datasheet Summary
Preferred Device
High Current Bias Resistor Transistor
PNP Silicon
Features http://onsemi.
- Collector
- Emitter Sustaining Voltage
- - High DC Current Gain
- hFE VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc = 125 (Min) @ IC = 0.8 Adc = 90 (Min) @ IC = 3.0 Adc Low Collector
- Emitter Saturation Voltage
- VCE(sat) = 0.275 Vdc (Max) @ IC = 1.2 Adc = 0.55 Vdc (Max) @ IC = 3.0 Adc SOT- 223 Surface Mount Packaging ESD Rating
- Human Body Model: Class 1B
- Machine Model: Class B Pb- Free Package is Available
- -
- -
POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS VCE(sat) = 0.275 VOLTS
COLLECTOR 2,4
BASE 1
EMITTER 3
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