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  ON Semiconductor Electronic Components Datasheet  

NSM80101MT1G Datasheet

NPN Transistor

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NSM80101MT1G
NPN Transistor with Dual
Series Switching Diode
Features
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
LCD Control Board
High Speed Switching
High Voltage Switching
MAXIMUM RATINGS PNP TRANSISTOR
Rating
Symbol
Collector Emitter Voltage
VCEO
Collector Base Voltage
VCBO
Emitter Base Voltage
VEBO
Collector Current Continuous
IC
MAXIMUM RATINGS SWITCHING DIODE
Value
80
80
6.0
500
Unit
Vdc
Vdc
Vdc
mAdc
Rating
Reverse Voltage
Forward Current
NonRepetitive Peak Forward Current
(Square Wave, TJ = 25°C prior to
surge)
t < 1 sec
t = 1 msec
Operating and Storage Junction
Temperature Range
Symbol
VR
IF
IFSM
TJ, Tstg
Value
100
200
1.0
20
55 to +150
Unit
V
mA
A
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ESD RATINGS
Rating
Electrostatic Discharge
HBM
MM
Class
3A
M4
Value
4000 V Failure < 8000 V
Failure > 400 V
THERMAL CHARACTERISTICS
Rating
Total Device Dissipation FR5 Board,
(Note 1) @ TA = 25°C
Derate above 25°C
Thermal Resistance from
JunctiontoAmbient (Note 1)
Total Device Dissipation FR5 Board
(Note 2) TA = 25°C
Derate above 25°C
Thermal Resistance,
JunctiontoAmbient (Note 2)
Junction and Storage
Temperature Range
1. FR5 = 650 mm2 pad, 2.0 oz Cu.
2. FR5 = 10 mm2 pad, 2.0 oz Cu.
Symbol
PD
RqJA
Max
400
313
Unit
mW
mW/°C
°C/W
PD
RqJA
270 mW
mW/°C
463 °C/W
TJ, Tstg 55 to +150
°C
© Semiconductor Components Industries, LLC, 2013
December, 2013 Rev. 3
1
http://onsemi.com
NPN Transistor with Dual Series
Switching Diode
654
D1
Q1
D2
123
654
1 23
SC74
CASE 318F
MARKING DIAGRAM
3NP MG
G
3NP = Device Code
M = Date Code*
G = PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
NSM80101MT1G SC74
(PbFree)
3000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NSM80101M/D


  ON Semiconductor Electronic Components Datasheet  

NSM80101MT1G Datasheet

NPN Transistor

No Preview Available !

NSM80101MT1G
Q1: NPN TRANSISTOR
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min Max
Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (Note 3)
Emitter Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
ON CHARACTERISTICS (Note 3)
(IC = 1.0 mA, IB = 0)
(IE = 100 mA, IC = 0)
(VCE = 60 V, IB = 0)
(VCB = 80 V, IE = 0)
V(BR)CEO
V(BR)EBO
ICES
ICBO
80
6.0
0.1
0.1
V
V
mA
mA
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
SMALLSIGNAL CHARACTERISTICS
(IC = 10 mA, VCE = 1.0 V)
hFE
120
VCE(sat)
(IC = 100 mA, IB = 10 mA)
0.3
(IC = 10 mA, VCE = 5.0 Vdc)
VBE(sat)
1.2
V
V
Current Gain Bandwidth Product
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)
fT
MHz
150
3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
D1, D2: SWITCHING DIODE (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
Reverse Voltage Leakage Current
Diode Capacitance
(VR = 75 V)
(VR = 20 V, TJ = 150°C)
(VR = 75 V, TJ = 150°C)
(VR = 0 V, f = 1.0 MHz)
V(BR)
IR
CD
75
1.0
30
100
2.0
V
mA
pF
Forward Voltage
(IF = 1.0 mA)
(IF = 10 mA)
(IF = 50 mA)
(IF = 150 mA)
VF
mV
715
855
1000
1250
Reverse Recovery Time
(IF = IR = 10 mA, iR(REC) = 1.0 mA, RL = 100 W)
trr
6.0
ns
Forward Recovery Voltage
(IF = 10 mA, tr = 20 ns)
VFR
1.75
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
http://onsemi.com
2


Part Number NSM80101MT1G
Description NPN Transistor
Maker ON Semiconductor
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