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  ON Semiconductor Electronic Components Datasheet  

NSR0170DT1G Datasheet

Schottky Barrier Diode

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NSR0170DT1G
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Schottky Barrier Diode
Schottky barrier diodes are optimized for very low forward voltage
drop and low leakage current and are used in a wide range of dc-dc
converter, clamping and protection applications in portable devices.
NSR0170DT in a SOD-323 small footprint package enables designers
to meet the challenging task of achieving higher efficiency designs and
meeting reduced space requirements.
Features
Very Low Forward Voltage Drop - 560 mV @ 10
Low Reverse Current - 25 nA @ 50 V VR
70 mA of Continuous Forward Current
Power Dissipation of 160 mW with Minimum Trace
Very High Switching Speed
Low Capacitance CT = 2 pF
NSV Prefix for Automotive and Other Applications Requiring
Unique site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
Pb-free Device, Halogen Free/BFR Free and are RoHS Compliant*
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol Max
Unit
Reverse Voltage
Forward Current (DC)
Non-repetitive peak surge forward current
ESD Rating: Human Body Model
VR
IF
IFSM
ESD
70 V
70 mA
100 mA
Class 2
Machine Model
Class B
Stresses exceeding Maximum Ratings may damage the device. Maximum
ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
This document contains information on a product under development. ON
Semiconductor reserves the right to change or discontinue this product without
notice.
http://onsemi.com
70 V SCHOTTKY
BARRIER DIODE
MARKING DIAGRAM
xx = TBD (Device Code)
M = Date Code*
` = Assembly Location
ORDERING INFORMATION
Device
NSR0170DT1G
NSVR0170DT1G
Package
SOD-323
(Pb-Free)
Shipping
3000 / Tape
& Reel
© Semiconductor Components Industries, LLC, 2011
September 2013- Rev. P0
1
Publication Order Number:
NSR0170DT


  ON Semiconductor Electronic Components Datasheet  

NSR0170DT1G Datasheet

Schottky Barrier Diode

No Preview Available !

NSR0170DT1G
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance
Junction-to-Ambient (Note 1)
Total Power Dissipation @ TA = 25°C
Thermal Resistance
RθJA
PD
Junction-to-Ambient (Note 2)
RθJA
Total Power Dissipation @ TA = 25°C
PD
Junction and Storage Temperature Range
TJ, Tstg
1. Mounted onto a 4 in square FR-4 board 10 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
2. Mounted onto a 4 in square FR-4 board 1 in sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
Min
-
-
-
-
-
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Reverse Leakage
(VR = 50 V)
(VR = 70 V)
Forward Voltage
(IF = 1.0 mA)
(IF = 10 mA)
(IF = 15 mA)
Total Capacitance
(VR = 0 V, f = 1 MHz)
IR
-
-
VF
-
-
-
CT
-
Typ
Max
Unit
- 740 °C/W
- 160 mW
- 460 °C/W
- 270 mW
- -55 to +150 °C
Typ Max Unit
25 90 nA
- 3.0 µA
0.34
0.56
0.65
2.0
0.39
0.64
0.73
-
V
pF
Figure 1. Forward Voltage
Figure 2. Leakage Current
Figure 3. Total Capacitance
2
NSR0170D/D


Part Number NSR0170DT1G
Description Schottky Barrier Diode
Maker ON Semiconductor
Total Page 3 Pages
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