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  ON Semiconductor Electronic Components Datasheet  

NSR0170HT1G Datasheet

Schottky Barrier Diode

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NSR0170HT1G
Schottky Barrier Diode
Schottky barrier diodes are optimized for very low forward voltage
drop and low leakage current and are used in a wide range of dc−dc
converter, clamping and protection applications in portable devices.
NSR0170H in a SOD−323 small footprint package enables designers
to meet the challenging task of achieving higher efficiency designs
and meeting reduced board space requirements.
Features
Very Low Forward Voltage Drop − 560 mV @ 10 mA
Low Reverse Current − 25 nA @ 50 V VR
70 mA of Continuous Forward Current
Power Dissipation of 180 mW with Minimum Trace
Very High Switching Speed
Low Capacitance − CT = 2 pF
NSVR Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
Automotive Modules
Buck and Boost dc−dc Converters
Reverse Voltage and Current Protection
Clamping & Protection
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Reverse Voltage
Forward Current (DC)
Non−Repetitive Peak Surge Forward
Current
VR 70 V
IF 70 mA
IFSM 100 mA
ESD Rating: Human Body Model
Machine Model
ESD
Class 2
Class M3
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
http://onsemi.com
70 V SCHOTTKY
BARRIER DIODE
1
CATHODE
2
ANODE
2 MARKING
DIAGRAM
1
SOD−323
CASE 477
Q MG
G
Q = Specific Device Code
M = Month Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
NSR0170HT1G SOD−323 3000 / Tape & Reel
(Pb−Free)
NSVR0170HT1G SOD−323 3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
May, 2014 − Rev. 0
1
Publication Order Number:
NSR0170H/D


  ON Semiconductor Electronic Components Datasheet  

NSR0170HT1G Datasheet

Schottky Barrier Diode

No Preview Available !

NSR0170HT1G
THERMAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ TA = 25°C
RqJA
PD
680
180
Thermal Resistance
Junction−to−Ambient (Note 2)
Total Power Dissipation @ TA = 25°C
RqJA
PD
440
280
Junction and Storage Temperature Range
TJ, Tstg
−55 to +150
1. Mounted onto a 4 in square FR−4 board 10 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Reverse Leakage
(VR = 50 V)
(VR = 70 V)
IR
25 90
− 3.0
Forward Voltage
(IF = 1.0 mA)
(IF = 10 mA)
(IF = 15 mA)
VF
340 390
560 640
650 730
Total Capacitance
(VR = 0 V, f = 1 MHz)
CT 2.0
Unit
°C/W
mW
°C/W
mW
°C
Unit
nA
mA
mV
pF
1000
100
10
1
0.1
0.01
0.001
0
150°C
125°C
85°C
25°C
−40°C
0.2 0.4 0.6 0.8 1.0 1.2
VF, FORWARD VOLTAGE (V)
Figure 1. Forward Voltage
100
10
1
0.1
0.01
0.001
0.0001
0.00001
1.4 1.6
0
150°C
125°C
85°C
25°C
−40°C
10 20 30 40 50 60
VR, REVERSE VOLTAGE (V)
Figure 2. Leakage Current
2.5
TA = 25°C
2.0
70
1.5
1.0
0.5
0
0
10
20 30 40 50 60
VR, REVERSE VOLTAGE (V)
Figure 3. Total Capacitance
70
80
http://onsemi.com
2


Part Number NSR0170HT1G
Description Schottky Barrier Diode
Maker ON Semiconductor
Total Page 3 Pages
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