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  ON Semiconductor Electronic Components Datasheet  

NSR01L30MX Datasheet

Schottky Barrier Diode

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NSR01L30MX
Schottky Barrier Diode
These Schottky barrier diodes are optimized for low forward
voltage drop and low leakage current.
Features
Very Low Forward Voltage Drop − 350 mV @ 1 mA
Low Reverse Current − 0.2 mA @ 10 V
100 mA of Continuous Forward Current
ESD Rating − Human Body Model: Class 3B
ESD Rating − Machine Model: Class C
This is a Halide−Free Device
This is a Pb−Free Device
Typical Applications
LCD and Keypad Backlighting
Camera Photo Flash
Buck and Boost dc−dc Converters
Reverse Voltage and Current Protection
Clamping & Protection
Markets
Mobile Handsets
MP3 Players
Digital Camera and Camcorders
Notebook PCs & PDAs
GPS
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Reverse Voltage
VR 30 V
Forward Current (DC)
IF 100 mA
Forward Surge Current
IFSM
(60 Hz @ 1 cycle)
2.0
A
ESD Rating:
Human Body Model
Machine Model
ESD
>8.0
>400
kV
V
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
www.onsemi.com
30 V SCHOTTKY
BARRIER DIODE
1
CATHODE
2
ANODE
X3DFN2
CASE 152AF
MARKING
DIAGRAM
PIN 1
M
L = Specific Device Code
(Rotated 180°)
M = Date Code
ORDERING INFORMATION
Device
Package
Shipping
NSR01L30MXT5G X3DFN2
(Pb−Free)
10000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
April, 2016 − Rev. 2
1
Publication Order Number:
NSR01L30MX/D


  ON Semiconductor Electronic Components Datasheet  

NSR01L30MX Datasheet

Schottky Barrier Diode

No Preview Available !

NSR01L30MX
THERMAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ TA = 25°C
RqJA
PD
695
180
Storage Temperature Range
Tstg −55 to +150
Junction Temperature
TJ +150
1. Mounted onto a 4 in square FR−4 board 100 mm sq. 2 oz. Cu 0.06” thick single−sided. Operating to steady state.
Unit
°C/W
mW
°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Reverse Leakage
(VR = 10 V)
(VR = 30 V)
IR mA
0.2
0.5
Forward Voltage
(IF = 1 mA)
(IF = 10 mA)
VF V
0.35
0.46
Total Capacitance
(VR = 5.0 V, f = 1 MHz)
CT 0.8 pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
2


Part Number NSR01L30MX
Description Schottky Barrier Diode
Maker ON Semiconductor
Total Page 4 Pages
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