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NSR0230M2T5G - Schottky Barrier Diode

Features

  • Extremely Fast Switching Speed.
  • Extremely Low Forward Voltage 0.325 V (max) @ IF = 10 mA.
  • Low Reverse Current.
  • AEC Qualified and PPAP Capable.
  • NSV Prefix for Automotive and Other.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NSR0230M2T5G, NSVR0230M2T5G Schottky Barrier Diode These Schottky barrier diodes are designed for high−speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand−held and portable applications where space is limited. Features  Extremely Fast Switching Speed  Extremely Low Forward Voltage 0.325 V (max) @ IF = 10 mA  Low Reverse Current  AEC Qualified and PPAP Capable  NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements  This is a Pb−Free Device* MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage Forward Current DC Forward Current Surge Peak (60 Hz, 1 cycle) VR 30 Vdc IF 200 mA IFSM 1.
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