900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




  ON Semiconductor Electronic Components Datasheet  

NSR0240MX Datasheet

Schottky Barrier Diode

No Preview Available !

NSR0240MX
Schottky Barrier Diode
Schottky barrier diodes are optimized for very low forward voltage
drop and low leakage current and are used in a wide range of dc−dc
converter, clamping and protection applications in portable devices.
NSR0240MX in a X2DFN2 miniature package enables designers to
meet the challenging task of achieving higher efficiency and meeting
reduced space requirements.
Features
Very Low Forward Voltage Drop − 460 mV @ 100 mA
Low Reverse Current − 0.2 mA @ 25 V VR
200 mA of Continuous Forward Current
Very High Switching Speed
Low Capacitance − CT = 7 pF
This is a Pb−Free Device
Typical Applications
LCD and Keypad Backlighting
Camera Photo Flash
Buck and Boost dc−dc Converters
Reverse Voltage and Current Protection
Clamping & Protection
Markets
Mobile Handsets
MP3 Players
Digital Camera and Camcorders
Notebook PCs & PDAs
GPS
MAXIMUM RATINGS
Rating
Symbol Value Unit
Reverse Voltage
Forward Current (DC)
Non−Repetitive Peak Forward Surge Current,
Square Wave, 10 ms
VR
IF
IFSM
40 V
200 mA
3.0 A
Repetitive Peak Forward Current,
Square Wave, 1.0 ms, D.C. = 25%
IFRM
1.0
A
ESD Rating: Human Body Model
Machine Model
ESD
Class 1C
Class A
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
www.onsemi.com
40 V SCHOTTKY
BARRIER DIODE
1
CATHODE
2
ANODE
MARKING
DIAGRAM
X2DFN2
CASE 714AB
RM
R = Specific Device Code
M = Month Code
ORDERING INFORMATION
Device
Package
Shipping
NSR0240MXT5G X2DFN2 8000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
July, 2015 − Rev. 1
1
Publication Order Number:
NSR0240MX/D


  ON Semiconductor Electronic Components Datasheet  

NSR0240MX Datasheet

Schottky Barrier Diode

No Preview Available !

NSR0240MX
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ TA = 25°C
Junction and Storage Temperature Range
1. FR−4, 20 mm2, 1 oz. Cu.
Symbol
RqJA
PD
TJ, Tstg
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Reverse Leakage
(VR = 25 V)
(VR = 40 V)
IR
Forward Voltage
(IF = 0.1 mA)
(IF = 1.0 mA)
(IF = 10 mA)
(IF = 100 mA)
(IF = 200 mA)
VF
Total Capacitance
(VR = 1.0 V, f = 1 MHz)
CT
Min
Min
Typ Max Unit
400
300
−55 to +150
°C/W
mW
°C
Typ Max Unit
mA
0.2 0.55
0.8 5.0
V
0.21 0.24
0.27 0.30
0.34 0.365
0.46 0.50
0.54 0.60
7.0 pF
1000
100
125°C
10
1 150°C
0.1
0.01
0.001 85°C 25°C
−40°C
0 0.1 0.2 0.3 0.4 0.5
VF, FORWARD VOLTAGE (V)
Figure 1. Forward Voltage
1.0E−02
1.0E−03
150°C
1.0E−04
1.0E−05
1.0E−06
1.0E−07
125°C
85°C
75°C
25°C
1.0E−08
−40°C
1.0E−09
1.0E−10
0.6 0
5 10 15 20 25 30 35 40 45
VR, REVERSE VOLTAGE (V)
Figure 2. Leakage Current
14
12 TA = 25°C
10
8
6
4
2
0
0 5 10 15 20 25 30 35 40 45
VR, REVERSE VOLTAGE (V)
Figure 3. Total Capacitance
www.onsemi.com
2


Part Number NSR0240MX
Description Schottky Barrier Diode
Maker ON Semiconductor
Total Page 3 Pages
PDF Download

NSR0240MX Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 NSR0240MX Schottky Barrier Diode
ON Semiconductor





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy