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  ON Semiconductor Electronic Components Datasheet  

NSR0240P2T5G Datasheet

Schottky Barrier Diode

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NSR0240P2T5G
Schottky Barrier Diode
Schottky barrier diodes are optimized for very low forward voltage
drop and low leakage current and are used in a wide range of dc−dc
converter, clamping and protection applications in portable devices.
NSR0240P2 in a SOD−923 miniature package enables designers to
meet the challenging task of achieving higher efficiency and meeting
reduced space requirements.
Features
Very Low Forward Voltage Drop − 460 mV @ 100 mA
Low Reverse Current − 0.2 mA @ 25 V VR
200 mA of Continuous Forward Current
Power Dissipation of 240 mW with Minimum Trace
Very High Switching Speed
Low Capacitance − CT = 7 pF
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
This is a Pb−Free Device
Typical Applications
LCD and Keypad Backlighting
Camera Photo Flash
Buck and Boost dc−dc Converters
Reverse Voltage and Current Protection
Clamping & Protection
Markets
Mobile Handsets
MP3 Players
Digital Camera and Camcorders
Notebook PCs & PDAs
GPS
MAXIMUM RATINGS
Rating
Symbol Value Unit
Reverse Voltage
Forward Current (DC)
Non−Repetitive Peak Forward Surge Current
ESD Rating: Human Body Model
Machine Model
VR
IF
IFSM
ESD
40 V
200 mA
2.0 A
Class 1C
Class A
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
www.onsemi.com
40 V SCHOTTKY
BARRIER DIODE
1
CATHODE
2
ANODE
2
1
SOD−923
CASE 514AB
MARKING
DIAGRAM
MG
G
12
P = Specific Device Code
M = Month Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
NSR0240P2T5G SOD−923 8000 / Tape & Reel
(Pb−Free)
NSVR0240P2T5G SOD−923 8000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 3
1
Publication Order Number:
NSR0240P2/D


  ON Semiconductor Electronic Components Datasheet  

NSR0240P2T5G Datasheet

Schottky Barrier Diode

No Preview Available !

NSR0240P2T5G
THERMAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ TA = 25°C
RqJA
PD
520
240
Thermal Resistance
Junction−to−Ambient (Note 2)
Total Power Dissipation @ TA = 25°C
RqJA
PD
175
710
Junction and Storage Temperature Range
TJ, Tstg
−55 to +150
1. Mounted onto a 4 in square FR−4 board 10 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
Unit
°C/W
mW
°C/W
mW
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Reverse Leakage
(VR = 25 V)
(VR = 40 V)
IR
Forward Voltage (IF = 10 mA)
(IF = 100 mA)
(IF = 200 mA)
VF
Total Capacitance
(VR = 1.0 V, f = 1 MHz)
CT
Min
Typ Max Unit
mA
0.2 0.55
0.8 5.0
0.34 0.365 V
0.46 0.50
0.54 0.60
7.0 pF
1000
100
125°C
10
1 150°C
0.1
0.01
0.001 85°C 25°C
−40°C
0 0.1 0.2 0.3 0.4 0.5
VF, FORWARD VOLTAGE (V)
Figure 1. Forward Voltage
1.0E−02
1.0E−03
150°C
1.0E−04
1.0E−05
1.0E−06
1.0E−07
125°C
85°C
75°C
25°C
1.0E−08
−40°C
1.0E−09
1.0E−10
0.6 0
5 10 15 20 25 30 35 40 45
VR, REVERSE VOLTAGE (V)
Figure 2. Leakage Current
14
12 TA = 25°C
10
8
6
4
2
0
0 5 10 15 20 25 30 35 40 45
VR, REVERSE VOLTAGE (V)
Figure 3. Total Capacitance
www.onsemi.com
2


Part Number NSR0240P2T5G
Description Schottky Barrier Diode
Maker ON Semiconductor
Total Page 3 Pages
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