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NSR05T40P2 - Schottky Barrier Diode

Key Features

  • Low Forward Voltage Drop.
  • 580 mV (Typ. ) @ IF = 500 mA.
  • Low Reverse Current.
  • 2.0 mA (Typ. ) @ VR = 40 V.
  • 500 mA of Continuous Forward Current.
  • ESD Rating:.
  • Human Body Model: Class 3B.
  • Charged Device Model: Class IV.
  • High Switching Speed.
  • These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant Typical.

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Datasheet Details

Part number NSR05T40P2
Manufacturer onsemi
File Size 60.89 KB
Description Schottky Barrier Diode
Datasheet download datasheet NSR05T40P2 Datasheet

Full PDF Text Transcription for NSR05T40P2 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NSR05T40P2. For precise diagrams, and layout, please refer to the original PDF.

NSR05T40P2 500 mA, 40 V Schottky Barrier Diode These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current that offers the most optim...

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orward voltage drop and low leakage current that offers the most optimal power dissipation in applications. They are housed in spacing saving micro−packaging ideal for space constraint applications. Features • Low Forward Voltage Drop − 580 mV (Typ.) @ IF = 500 mA • Low Reverse Current − 2.0 mA (Typ.

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