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  ON Semiconductor Electronic Components Datasheet  

NSR10F20NXT5G Datasheet

Schottky Barrier Diode

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NSR10F20NXT5G
Schottky Barrier Diode
These Schottky barrier diodes are optimized for low forward
voltage drop and low leakage current and are offered in a Chip Scale
Package (CSP) to reduce board space. The low thermal resistance
enables designers to meet the challenging task of achieving higher
efficiency and meeting reduced space requirements.
Features
Low Forward Voltage Drop 430 mV @ 1.0 A
Low Reverse Current 20 mA @ 10 V VR
1.0 A of Continuous Forward Current
ESD Rating Human Body Model: Class 3B
ESD Rating Machine Model: Class C
High Switching Speed
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
LCD and Keypad Backlighting
Camera Photo Flash
Buck and Boost dcdc Converters
Reverse Voltage and Current Protection
Clamping & Protection
Markets
Mobile Handsets
MP3 Players
Digital Camera and Camcorders
Notebook PCs & PDAs
GPS
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Reverse Voltage
Forward Current (DC)
Forward Surge Current (60 Hz @ 1 cycle)
ESD Rating:
Human Body Model
Machine Model
VR
IF
IFSM
ESD
20
1.0
18
>8
> 400
V
A
A
kV
V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
20 V SCHOTTKY
BARRIER DIODE
1
CATHODE
2
ANODE
2
1
DSN2
(0502)
CASE 152AD
MARKING
DIAGRAM
PIN 1
10F20
YYY
10F20 = Specific Device Code
YYY = Year Code
ORDERING INFORMATION
Device
Package
Shipping
NSR10F20NXT5G DSN2 5000 / Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2010
July, 2010 Rev. 1
1
Publication Order Number:
NSR10F20/D


  ON Semiconductor Electronic Components Datasheet  

NSR10F20NXT5G Datasheet

Schottky Barrier Diode

No Preview Available !

NSR10F20NXT5G
THERMAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Thermal Resistance
JunctiontoAmbient (Note 1)
Total Power Dissipation @ TA = 25°C
RPqDJA
228
548
Thermal Resistance
JunctiontoAmbient (Note 2)
Total Power Dissipation @ TA = 25°C
RPqDJA
85
1.47
Storage Temperature Range
Tstg 40 to +125
Junction Temperature
TJ +150
1. Mounted onto a 4 in square FR4 board 50 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
2. Mounted onto a 4 in square FR4 board 1 in sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
Unit
°C/W
mW
°C/W
W
°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Reverse Leakage
(VR = 10 V)
(VR = 20 V)
IR
Forward Voltage
(IF = 0.5 A)
(IF = 1.0 A)
VF
Min
Typ
0.380
0.430
Max
20
100
0.400
0.450
Unit
mA
V
10
1
TJ = 125°C
0.1 TJ = 150°C
0.01
0.001
0
25°C
75°C
25°C
0.1 0.2 0.3 0.4
VF, FORWARD VOLTAGE (V)
Figure 1. Forward Voltage
0.5
100000
10000
1000
100
10
1
0.1
0.01
0.001
0.6 0
150°C
125°C
75°C
25°C
25°C
4 8 12 16
VR, REVERSE VOLTAGE (V)
Figure 2. Typical Reverse Current
20
300
TA = 25°C
250
200
150
100
50
0
0 4 8 12 16 20
VR, REVERSE VOLTAGE (V)
Figure 3. Typical Capacitance
http://onsemi.com
2


Part Number NSR10F20NXT5G
Description Schottky Barrier Diode
Maker ON Semiconductor
Total Page 3 Pages
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