Datasheet4U Logo Datasheet4U.com

NSR10F30NXT5G - Schottky Barrier Diode

Key Features

  • Low Forward Voltage Drop.
  • 420 mV @ 1.0 A.
  • Low Reverse Current.
  • 20 mA @ 10 V VR.
  • 1.0 A of Continuous Forward Current.
  • ESD Rating.
  • Human Body Model: Class 3B ESD Rating.
  • Machine Model: Class C.
  • High Switching Speed.
  • These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant Typical.

📥 Download Datasheet

Full PDF Text Transcription for NSR10F30NXT5G (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NSR10F30NXT5G. For precise diagrams, and layout, please refer to the original PDF.

NSR10F30NXT5G Schottky Barrier Diode These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current and are offered in a Chip Scale Pack...

View more extracted text
tage drop and low leakage current and are offered in a Chip Scale Package (CSP) to reduce board space. The low thermal resistance enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements. Features • Low Forward Voltage Drop − 420 mV @ 1.0 A • Low Reverse Current − 20 mA @ 10 V VR • 1.

More Datasheets from onsemi

Part Number Description
NSR10F30QNXT5G Schottky Diode Optimized for High Frequency Switching Power Supplies
NSR10F20NXT5G Schottky Barrier Diode
NSR10F40NXT5G Schottky Barrier Diode
NSR10F40QNXT5G Schottky Diode Optimized for High Frequency Switching Power Supplies
NSR1020MW2 Schottky Barrier Diode
NSR1020MW2T1G Schottky Barrier Diodes
NSR15ADXV6T1 Dual RF Schottky Diode
NSR15ADXV6T5 Dual RF Schottky Diode
NSR15DW1 Dual RF Schottky Diode
NSR15TW1 Triple RF Schottky Diode