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  ON Semiconductor Electronic Components Datasheet  

NSR10F40NXT5G Datasheet

Schottky Barrier Diode

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NSR10F40NXT5G
Schottky Barrier Diode
These Schottky barrier diodes are optimized for low forward
voltage drop and low leakage current and are offered in a Chip Scale
Package (CSP) to reduce board space. The low thermal resistance
enables designers to meet the challenging task of achieving higher
efficiency and meeting reduced space requirements.
Features
Very Low Forward Voltage Drop − 490 mV @ 1.0 A
Low Reverse Current − 10 mA @ 10 V VR
1.0 A of Continuous Forward Current
ESD Rating − Human Body Model: Class 3B
ESD Rating − Machine Model: Class C
Very High Switching Speed
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
LCD and Keypad Backlighting
Camera Photo Flash
Buck and Boost dc−dc Converters
Reverse Voltage and Current Protection
Clamping & Protection
Markets
Mobile Handsets
MP3 Players
Digital Camera and Camcorders
Notebook PCs & PDAs
GPS
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Reverse Voltage
Forward Current (DC)
Forward Surge Current (60 Hz @ 1 cycle)
Repetitive Peak Forward Current
(Pulse Wave = 1 sec, Duty Cycle = 66%)
VR
IF
IFSM
IFRM
40
1.0
18
4.0
V
A
A
A
ESD Rating:
Human Body Model
Machine Model
ESD
>8
> 400
kV
V
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
www.onsemi.com
40 V SCHOTTKY
BARRIER DIODE
1
CATHODE
2
ANODE
2
1
DSN2
(0502)
CASE 152AD
MARKING
DIAGRAM
PIN 1
10F40
YYY
10F40 = Specific Device Code
YYY = Year Code
ORDERING INFORMATION
Device
Package
Shipping
NSR10F40NXT5G DSN2 5000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
December, 2014 − Rev. 4
1
Publication Order Number:
NSR10F40/D


  ON Semiconductor Electronic Components Datasheet  

NSR10F40NXT5G Datasheet

Schottky Barrier Diode

No Preview Available !

NSR10F40NXT5G
THERMAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ TA = 25°C
RqJA
PD
228
548
Thermal Resistance
Junction−to−Ambient (Note 2)
Total Power Dissipation @ TA = 25°C
RqJA
PD
85
1.47
Storage Temperature Range
Tstg −40 to +125
Junction Operating Temperature Range
TJ −40 to +150
1. Mounted onto a 4 in square FR−4 board 50 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
Unit
°C/W
mW
°C/W
W
°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Reverse Leakage
(VR = 10 V)
(VR = 40 V)
IR mA
10
100
Forward Voltage
(IF = 0.5 A)
(IF = 1.0 A)
VF V
0.42
0.49
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1
TJ = 125°C
TJ = 150°C
0.1
0.01
0.001
0.0
75°C 25°C −25°C
0.1 0.2 0.3 0.4
VF, FORWARD VOLTAGE (V)
Figure 1. Forward Voltage
100000
10000
1000
100
10
1
0.1
0.01
0.001
0.5 0
150°C
125°C
75°C
25°C
−25°C
5 10 15 20 25 30 35
VR, REVERSE VOLTAGE (V)
Figure 2. Typical Reverse Current
40
200
180
160
140
120
100
80
60
40
20
0
0
TA = 25°C
5 10 15 20 25 30 35 40
VR, REVERSE VOLTAGE (V)
Figure 3. Typical Capacitance
www.onsemi.com
2


Part Number NSR10F40NXT5G
Description Schottky Barrier Diode
Maker ON Semiconductor
Total Page 3 Pages
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