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  ON Semiconductor Electronic Components Datasheet  

NSR10F40QNXT5G Datasheet

Schottky Diode Optimized for High Frequency Switching Power Supplies

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NSR10F40QNXT5G
Schottky Diode Optimized
for High Frequency
Switching Power Supplies
These Schottky barrier diodes are optimized for low forward
voltage drop and low leakage current and are offered in a Chip Scale
Package (CSP) to reduce board space. The low thermal resistance
enables designers to meet the challenging task of achieving higher
efficiency and meeting reduced space requirements.
Features
Very Low Forward Voltage Drop 490 mV @ 1.0 A
Low Reverse Current 10 mA @ 10 V VR
1.0 A of Continuous Forward Current
ESD Rating Human Body Model: Class 3B
ESD Rating Machine Model: Class C
Very High Switching Speed
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
LCD and Keypad Backlighting
Camera Photo Flash
Buck and Boost dcdc Converters
Reverse Voltage and Current Protection
Clamping & Protection
Markets
Mobile Handsets
MP3 Players
Digital Camera and Camcorders
Notebook PCs & PDAs
GPS
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Reverse Voltage
Forward Current (DC)
Forward Surge Current (60 Hz @ 1 cycle)
ESD Rating:
Human Body Model
Machine Model
VR
IF
IFSM
ESD
40
1.0
18
>8
> 400
V
A
A
kV
V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
40 V SCHOTTKY
BARRIER DIODE
1
CATHODE
2
ANODE
2
1
DSN2
(0502)
CASE 152AD
MARKING
DIAGRAM
PIN 1
10F40
YYY
10F40 = Specific Device Code
YYY = Year Code
ORDERING INFORMATION
Device
Package Shipping
NSR10F40QNXT5G DSN2 5000 / Tape &
(PbFree)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
March, 2013 Rev. 0
1
Publication Order Number:
NSR10F40Q/D


  ON Semiconductor Electronic Components Datasheet  

NSR10F40QNXT5G Datasheet

Schottky Diode Optimized for High Frequency Switching Power Supplies

No Preview Available !

NSR10F40QNXT5G
THERMAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Thermal Resistance
JunctiontoAmbient (Note 1)
Total Power Dissipation @ TA = 25°C
RPqDJA
228
548
Thermal Resistance
JunctiontoAmbient (Note 2)
Total Power Dissipation @ TA = 25°C
RPqDJA
85
1.47
Storage Temperature Range
Tstg 40 to +125
Junction Temperature
TJ +150
1. Mounted onto a 4 in square FR4 board 50 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
2. Mounted onto a 4 in square FR4 board 1 in sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
Unit
°C/W
mW
°C/W
W
°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Reverse Leakage
(VR = 10 V)
(VR = 40 V)
IR mA
10
100
Forward Voltage
(IF = 0.5 A)
(IF = 1.0 A)
VF
V
0.42
0.49
Reverse Recovery (Special)
Switch from Forward Current to Reverse Voltage
TRR
ns
Time taken from 1 ns Transition Time to Fully Stabilized
(IF = 750 mA to VR = 36 V, 25°C)
(IF = 750 mA to VR = 36 V, 85°C)
28.7
27.4
http://onsemi.com
2


Part Number NSR10F40QNXT5G
Description Schottky Diode Optimized for High Frequency Switching Power Supplies
Maker ON Semiconductor
Total Page 6 Pages
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