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  ON Semiconductor Electronic Components Datasheet  

NSR20F20 Datasheet

Schottky Barrier Diode

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NSR20F20
Schottky Barrier Diode
These Schottky barrier diodes are optimized for low forward
voltage drop and low leakage current and are offered in a Chip Scale
Package (CSP) to reduce board space. The low thermal resistance
enables designers to meet the challenging task of achieving higher
efficiency and meeting reduced space requirements.
Features
Low Forward Voltage Drop − 450 mV @ 2.0 A
Low Reverse Current − 30 mA @ 10 V VR
2.0 A of Continuous Forward Current
Power Dissipation of 665 mW with Minimum Trace
ESD Rating − Human Body Model: Class 3B
ESD Rating − Machine Model: Class C
High Switching Speed
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
LCD and Keypad Backlighting
Camera Photo Flash
Buck and Boost dc−dc Converters
Reverse Voltage and Current Protection
Clamping & Protection
Markets
Mobile Handsets
MP3 Players
Digital Camera and Camcorders
Notebook PCs & PDAs
GPS
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Reverse Voltage
Forward Current (DC)
Forward Surge Current (60 Hz @ 1 cycle)
Repetitive Peak Forward Current
(Pulse Wave = 1 sec, Duty Cycle = 66%)
VR
IF
IFSM
IFRM
20
2.0
28
4.0
V
A
A
A
ESD Rating:
Human Body Model
Machine Model
ESD
>8
> 400
kV
V
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
www.onsemi.com
20 V SCHOTTKY
BARRIER DIODE
1
CATHODE
2
ANODE
2
1
DSN2
(0603)
CASE 152AB
MARKING
DIAGRAM
PIN 1
20F20
YYY
20F20 = Specific Device Code
YYY = Year Code
ORDERING INFORMATION
Device
Package
Shipping
NSR20F20NXT5G DSN2 5000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
April, 2016 − Rev. 3
1
Publication Order Number:
NSR20F20/D


  ON Semiconductor Electronic Components Datasheet  

NSR20F20 Datasheet

Schottky Barrier Diode

No Preview Available !

NSR20F20
THERMAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ TA = 25°C
RqJA
PD
213
586
Thermal Resistance
Junction−to−Ambient (Note 2)
Total Power Dissipation @ TA = 25°C
RqJA
PD
80
1.56
Storage Temperature Range
Tstg −40 to +125
Junction Temperature
TJ +150
1. Mounted onto a 4 in square FR−4 board 50 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
Unit
°C/W
mW
°C/W
W
°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Reverse Leakage
(VR = 10 V)
(VR = 20 V)
IR
Forward Voltage
(IF = 1.0 A)
(IF = 2.0 A)
VF
Reverse Recovery Time
(IF = IR = 10 mA, IR(REC) = 1.0 mA, Figure 4)
trr
Min
Typ
0.390
0.450
80
Max
30
150
0.420
0.470
Unit
mA
V
ns
www.onsemi.com
2


Part Number NSR20F20
Description Schottky Barrier Diode
Maker ON Semiconductor
Total Page 4 Pages
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