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  ON Semiconductor Electronic Components Datasheet  

NSV1SS400T1G Datasheet

High-Speed Switching Diode

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1SS400T1G,
NSV1SS400T1G
High-Speed
Switching Diode
Features
High−Speed Switching Applications
Lead Finish: 100% Matte Sn (Tin)
Qualified Maximum Reflow Temperature: 260°C
Extremely Small SOD−523 Package
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C)
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
THERMAL CHARACTERISTICS
Symbol
VR
IF
IFM(surge)
Max
100
200
500
Unit
V
mAdc
mAdc
Characteristic
Total Device Dissipation
FR−5 Board (Note 1) @TA = 25°C
Derate above 25°C
Symbol
PD
Max Unit
200 mW
1.57 mW/°C
Thermal Resistance, Junction-to-Ambient
RqJA
635 °C/W
Junction and Storage Temperature Range
TJ, Tstg −55 to
+150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4 @ Minimum Pad.
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(VR = 80 Vdc)
IR
− 0.1 mAdc
Diode Capacitance
(VR = 0 V, f = 1.0 MHz)
CD
− 3.0 pF
Forward Voltage
(IF = 100 mAdc)
VF
− 1.2 Vdc
Reverse Recovery Time
(IF = IR = 10 mAdc)
trr
− 4.0 ns
http://onsemi.com
1
CATHODE
2
ANODE
1
SOD−523
CASE 502
PLASTIC
MARKING DIAGRAM
AMG
G
1
A = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending upon
manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
1SS400T1G
SOD−523 3000 / Tape & Reel
(Pb−Free)
1SS400T5G
SOD−523 8000 / Tape & Reel
(Pb−Free)
NSV1SS400T1G SOD−523 3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
June, 2014 − Rev. 8
1
Publication Order Number:
1SS400T1/D


  ON Semiconductor Electronic Components Datasheet  

NSV1SS400T1G Datasheet

High-Speed Switching Diode

No Preview Available !

1SS400T1G, NSV1SS400T1G
+10 V
820 W
2.0 k
100 mH
0.1 mF
IF
50 W OUTPUT
PULSE
GENERATOR
DUT
0.1 mF
tr tp
10%
t
50 W INPUT
SAMPLING
OSCILLOSCOPE
VR
90%
INPUT SIGNAL
IF
trr t
iR(REC) = 1.0 mA
IR
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
100 10
TA = 85°C
10
TA = -40°C
1.0
TA = 25°C
0.1
1.0
0.01
0.1
0.2
0.4 0.6 0.8 1.0
VF, FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
0.001
1.2 0
TA = 150°C
TA = 125°C
TA = 85°C
TA = 55°C
TA = 25°C
10 20 30 40
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Leakage Current
50
0.68
0.64
0.60
0.56
0.52
0
2.0 4.0 6.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
8.0
http://onsemi.com
2


Part Number NSV1SS400T1G
Description High-Speed Switching Diode
Maker ON Semiconductor
Total Page 3 Pages
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