Full PDF Text Transcription for NSVBSS63LT1G (Reference)
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NSVBSS63LT1G. For precise diagrams, and layout, please refer to the original PDF.
BSS63LT1G, NSVBSS63LT1G High Voltage Transistor PNP Silicon Features • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requireme...
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Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage Collector −Emitter Voltage RBE = 10 kW Collector Current − Continuous THERMAL CHARACTERISTICS VCEO VCER IC −100 −110 −100 Vdc Vdc mAdc Characteristic Symbol Max Unit Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C PD mW 225 1.8 mW/°C Thermal Resistance Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25