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NSVMBT3904DW1 - Dual General Purpose Transistors

Features

  • hFE, 100.
  • 300.
  • Low VCE(sat), ≤ 0.4 V.
  • Simplifies Circuit Design.
  • Reduces Board Space.
  • Reduces Component Count.
  • Available in 8 mm, 7.
  • inch/3,000 Unit Tape and Reel.
  • S and NSV Prefix for Automotive and Other.

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Datasheet Details

Part number NSVMBT3904DW1
Manufacturer onsemi
File Size 96.82 KB
Description Dual General Purpose Transistors
Datasheet download datasheet NSVMBT3904DW1 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MBT3904DW1, MBT3904DW2, SMBT3904DW1, NSVMBT3904DW1 Dual General Purpose Transistors The MBT3904DW1 and MBT3904DW2 devices are a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low−power surface mount applications where board space is at a premium. Features • hFE, 100−300 • Low VCE(sat), ≤ 0.
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