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  ON Semiconductor Electronic Components Datasheet  

NSVR0240V2T1G Datasheet

Schottky Barrier Diode

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NSR0240V2T1G,
NSVR0240V2T1G
Schottky Barrier Diode
Schottky barrier diodes are optimized for very low forward voltage
drop and low leakage current and are used in a wide range of dcdc
converter, clamping and protection applications in portable devices.
NSR0240V2 in a SOD523 miniature package enables designers to
meet the challenging task of achieving higher efficiency and meeting
reduced space requirements.
Features
Very Low Forward Voltage Drop 480 mV @ 100 mA
Low Reverse Current 0.2 mA @ 25 V VR
250 mA of Continuous Forward Current
Power Dissipation of 200 mW with Minimum Trace
Very High Switching Speed
Low Capacitance CT = 4 pF
AEC Qualified and PPAP Capable
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
This is a PbFree Device*
Typical Applications
LCD and Keypad Backlighting
Camera Photo Flash
Buck and Boost dcdc Converters
Reverse Voltage and Current Protection
Clamping & Protection
Markets
Mobile Handsets
MP3 Players
Digital Camera and Camcorders
Notebook PCs & PDAs
GPS
MAXIMUM RATINGS
Rating
Symbol Value Unit
Reverse Voltage
Forward Continuous Current (DC)
NonRepetitive Peak Forward Surge Current
ESD Rating: Human Body Model
Machine Model
VR
IF
IFSM
ESD
40 Vdc
250 mA
2.0 A
Class 2
Class A
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2011
November, 2011 Rev. 2
1
http://onsemi.com
40 VOLT SCHOTTKY
BARRIER DIODE
SOD523
CASE 502
PLASTIC
1
CATHODE
2
ANODE
MARKING DIAGRAM
AC M G
1 G2
AC = Device Code
M = Date Code*
G = PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation position may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
NSR0240V2T1G
NSVR0240V2T1G
Package
SOD523*
(PbFree)
SOD523*
(PbFree)
Shipping
3,000 /
Tape & Reel
3,000 /
Tape & Reel
*This package is inherently PbFree.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NSR0240V2T1/D


  ON Semiconductor Electronic Components Datasheet  

NSVR0240V2T1G Datasheet

Schottky Barrier Diode

No Preview Available !

NSR0240V2T1G, NSVR0240V2T1G
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance
JunctiontoAmbient (Note 1)
Total Power Dissipation @ TA = 25C
RPqDJA
600
200
Thermal Resistance
JunctiontoAmbient (Note 2)
Total Power Dissipation @ TA = 25C
RPqDJA
300
400
Junction and Storage Temperature Range
TJ, Tstg
55 to +150
1. Mounted onto a 4 in square FR4 board 10 mm sq. 1 oz. Cu 0.06” thick singlesided. Operating to steady state.
2. Mounted onto a 4 in square FR4 board 1 in sq. 1 oz. Cu 0.06” thick singlesided. Operating to steady state.
Unit
C/W
mW
C/W
mW
C
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Reverse Leakage
(VR = 10 V)
(VR = 25 V)
(VR = 40 V)
IR
mA
0.55
0.2 2.0
0.5 10
Forward Voltage
(IF = 10 mA)
(IF = 100 mA)
(IF = 200 mA)
VF
mV
345 390
485 550
580 700
Total Capacitance
(VR = 5.0 V, f = 1 MHz)
CT pF
4.0
Reverse Recovery Time
(IF = IR = 10 mA, IR = 1.0 mA)
trr ns
3.0
DC Current
+ Source
0.1 mF
tr tp
0V
10%
750 mH
50 W Output
Pulse
Generator
0.1 mF
Adjust for IRM
IF
DUT
VR 90%
Pulse Generator
Output
IF
trr
50 W Input
Oscilloscope
RL = 50 W
Current
Transformer
IRM iR(REC) = 1 mA
Output Pulse
(IF = IRM = 10 mA; measured
at iR(REC) = 1 mA)
1. DC Current Source is adjusted for a Forward Current (IF) of 10 mA.
2. Pulse Generator Output is adjusted for a Peak Reverse Recovery Current IRM of 10 mA.
3. Pulse Generator transition time << trr.
4. IR(REC) is measured at 1 mA. Typically 0.1 X IRM or 0.25 X IRM.
5. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
http://onsemi.com
2


Part Number NSVR0240V2T1G
Description Schottky Barrier Diode
Maker ON Semiconductor
Total Page 4 Pages
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