NSVT1418L
NSVT1418L is PNP Single Bipolar Transistor manufactured by onsemi.
Features
- Large Current Capacitance
- Low Collector to Emitter Saturation Voltage
- High Speed Switching
- High Allowable Power Dissipation
- AEC- Q101 Qualified and PPAP Capable
- Pb- Free, Halogen Free and Ro HS pliant
- Ultra Small Package Facilitates Miniaturization in End Products
Typical Applications
- High Side Switch
- Lighting, Infotainment
ABSOLUTE MAXIMUM RATINGS at TA = 25°C
Parameter
Symbol Value Unit
Collector to Base Voltage
VCBO
- 180
Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation (Note 1) Junction Temperature
VCEO VEBO
IC ICP PC Tj
- 160
- 6
- 1
- 2
_C
Storage Temperature Range
Tstg
- 55 to +150 _C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface mounted on ceramic substrate. (250 mm2 x 0.8 mm)
DATA SHEET .onsemi.
3 1
2 SOT- 23 CASE 318- 08
ELECTRICAL CONNECTION 3
Collector
1...