Datasheet4U Logo Datasheet4U.com

NSVT3904DXV6T1G - Dual General Purpose Transistor

Key Features

  • hFE, 100.
  • 300.
  • Low VCE(sat), ≤ 0.4 V.
  • Simplifies Circuit Design.
  • Reduces Board Space.
  • Reduces Component Count.
  • AEC.
  • Q101 Qualified and PPAP Capable.
  • NSVT3904DXV6T1G.
  • NSV Prefix for Automotive and Other.

📥 Download Datasheet

Other Datasheets by onsemi

Part Number Description
NSVT30010MXV6T1G Dual Matched General Purpose Transistor
NSVT1418L PNP Single Bipolar Transistor
NSVT45011MW6T3G Dual Matched General Purpose Transistor
NSVT5551DW1 Dual-Chip NPN General-Purpose Amplifier
NSV1C200L PNP Transistor
NSV1C200MZ4 PNP Transistor
NSV1C201MZ4 NPN Transistor
NSV1C300CT Bipolar Power Transistors
NSV1SS400T1G High-Speed Switching Diode
NSV40200L PNP Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Dual General Purpose Transistor NST3904DXV6T1G, NSVT3904DXV6T1G, NST3904DXV6T5G The NST/NSV3904DXV6 device is a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−563 six−leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low−power surface mount applications where board space is at a premium. Features • hFE, 100−300 • Low VCE(sat), ≤ 0.