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NSVUMC2NT1G Datasheet

Dual Common Base-Collector Bias Resistor Transistors

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UMC2NT1G,
NSVUMC2NT1G,
UMC3NT1G,
NSVUMC3NT1G,
UMC5NT1G,
NSVUMC5NT2G
Dual Common
Base-Collector Bias
Resistor Transistors
NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network
The Bias Resistor Transistor (BRT) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a baseemitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the UMC2NT1G series, two
complementary BRT devices are housed in the SOT353 package
which is ideal for low power surface mount applications where board
space is at a premium.
Features
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Available in 8 mm, 7 inch/3000 Unit Tape and Reel
AECQ101 Qualified and PPAP Capable
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS (TA = 25C unless otherwise noted, common for
Q1 and Q2, minus sign for Q1 (PNP) omitted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
Collector Current
IC 100 mAdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2011
December, 2011 Rev. 10
1
http://onsemi.com
SC88A/SOT353
CASE 419A
STYLE 6
32
R1 R2
1
Q1
4
R2
R1
Q2
5
MARKING DIAGRAM
54
Ux M G
G
1 23
Ux = Device Marking
x = 2, 3 or 5
M = Date Code
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
Publication Order Number:
UMC2NT1/D


  ON Semiconductor Electronic Components Datasheet  

NSVUMC2NT1G Datasheet

Dual Common Base-Collector Bias Resistor Transistors

No Preview Available !

UMC2NT1G, NSVUMC2NT1G, UMC3NT1G, NSVUMC3NT1G, UMC5NT1G,
NSVUMC5NT2G
MAXIMUM RATINGS (TA = 25C unless otherwise noted, common for Q1 and Q2, minus sign for Q1 (PNP) omitted)
Rating
Symbol
Value
THERMAL CHARACTERISTICS
Thermal Resistance Junction-to-Ambient (surface mounted)
RqJA
833
Operating and Storage Temperature Range
TJ, Tstg
65 to +150
Total Package Dissipation @ TA = 25C (Note 1)
PD *150
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
Unit
C/W
C
mW
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Q1 TRANSISTOR: PNP
OFF CHARACTERISTICS
Collector-Base Cutoff Current
(VCB = 50 V, IE = 0)
Collector-Emitter Cutoff Current
(VCE = 50 V, IB = 0)
Emitter-Base Cutoff Current
(VEB = 6.0, IC = 0 mA)
UMC2NT1G, NSVUMC2NT1G
UMC3NT1G, NSVUMC3NT1G
UMC5NT1G/T2G, NSVUMC5NT2G
ON CHARACTERISTICS
Collector-Base Breakdown Voltage
(IC = 10 mA, IE = 0)
Collector-Emitter Breakdown Voltage
(IC = 2.0 mA, IB = 0)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
UMC2NT1G, NSVUMC2NT1G
UMC3NT1G, NSVUMC3NT1G
UMC5NT1G/T2G, NSVUMC5NT2G
CollectorEmitter Saturation Voltage
(IC = 10 mA, IB = 0.3 mA)
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
Output Voltage (off)
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
Input Resistor
UMC2NT1G
UMC3NT1G
UMC5NT1G/T2G
Resistor Ratio
UMC2NT1G
UMC3NT1G
UMC5NT1G/T2G
ICBO
ICEO
IEBO
V(BR)CBO
V(BR)CEO
hFE
VCE(SAT)
VOL
VOH
R1
R1/R2
50
50
60
35
20
4.9
15.4
7.0
3.3
0.8
0.8
0.38
100
60
35
22
10
4.7
1.0
1.0
0.47
nAdc
100
nAdc
500
mAdc
0.2
0.5
1.0
Vdc
Vdc
Vdc
0.25
Vdc
0.2
Vdc
kW
28.6
13
6.1
1.2
1.2
0.56
http://onsemi.com
2


Part Number NSVUMC2NT1G
Description Dual Common Base-Collector Bias Resistor Transistors
Maker ON Semiconductor
Total Page 11 Pages
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