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  ON Semiconductor Electronic Components Datasheet  

NTB25P06T4G Datasheet

Power MOSFET

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NTB25P06, NVB25P06
Power MOSFET
60 V, 27.5 A, PChannel D2PAK
Designed for low voltage, high speed switching applications and to
withstand high energy in the avalanche and commutation modes.
Features
AEC Q101 Qualified NVB25P06
These Devices are PbFree and are RoHS Compliant
Typical Applications
PWM Motor Controls
Power Supplies
Converters
Bridge Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
DraintoSource Voltage
GatetoSource Voltage
Continuous
NonRepetitive (tpv10 ms)
Drain Current
Continuous @ TA = 25°C
Single Pulse (tpv10 ms)
Total Power Dissipation @ TA = 25°C
Operating and Storage
Temperature Range
VDSS
60
V
VGS
VGSM
"15
"20
V
Vpk
ID
IDM
PD
TJ, Tstg
27.5
80
120
55 to
+175
A
Apk
W
°C
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 25 V, VGS = 10 V,
IL(pk) = 20 A, L = 3 mH, RG = 25 W)
EAS 600 mJ
Thermal Resistance
JunctiontoCase
JunctiontoAmbient (Note 1)
JunctiontoAmbient (Note 2)
RqJC
RqJA
RqJA
°C/W
1.25
46.8
63.2
Maximum Lead Temperature for Soldering
Purposes, (1/8from case for 10 s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 1pad size
(Cu Area 1.127 in2).
2. When surface mounted to an FR4 board using the minimum recommended
pad size (Cu Area 0.412 in2).
http://onsemi.com
V(BR)DSS
60 V
RDS(on) TYP
65 mW @ 10 V
ID MAX
27.5 A
PChannel
D
G
S
MARKING DIAGRAM
& PIN ASSIGNMENT
Drain
4
2
1
3
D2PAK
CASE 418B
NTB
25P06G
AYWW
Drain
Gate
Source
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
ORDERING INFORMATION
Device
Package
Shipping
NTB25P06T4G
D2PAK 800 / Tape & Reel
(PbFree)
NVB25P06T4G
D2PAK 800 / Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
October, 2011 Rev. 4
1
Publication Order Number:
NTB25P06/D


  ON Semiconductor Electronic Components Datasheet  

NTB25P06T4G Datasheet

Power MOSFET

No Preview Available !

NTB25P06, NVB25P06
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage (Note 3)
(VGS = 0 V, ID = 250 mA)
(Positive Temperature Coefficient)
V(BR)DSS
Zero Gate Voltage Drain Current
(VGS = 0 V, VDS = 60 V, TJ = 25°C)
(VGS = 0 V, VDS = 60 V, , TJ = 150°C)
GateBody Leakage Current (VGS = ± 15 V, VDS = 0 V)
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
(VDS = VGS, ID = 250 mA)
(Negative Threshold Temperature Coefficient)
IDSS
IGSS
VGS(th)
Static DrainSource OnState Resistance
(VGS = 10 V, ID = 12.5 A)
(VGS = 10 V, ID = 25 A)
Forward Transconductance
(VDS = 10 V, ID = 12.5 A)
RDS(on)
gFS
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 V, VGS = 0 V,
F = 1.0 MHz)
SWITCHING CHARACTERISTICS (Notes 3 & 4)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 30 V, ID = 25 A,
VGS = 10 V RG = 9.1 W)
Fall Time
Gate Charge
(VDS = 48 V, ID = 25 A,
VGS = 10 V)
BODYDRAIN DIODE RATINGS (Note 3)
Diode Forward OnVoltage
(IS = 25 A, VGS = 0 V)
(IS = 25 A, VGS = 0 V, TJ = 150°C)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
VSD
Reverse Recovery Time
(IS = 25 A, VGS = 0 V,
dIS/dt = 100 A/ms)
trr
ta
tb
Reverse Recovery Stored Charge
QRR
3. Indicates Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
4. Switching characteristics are independent of operating junction temperatures.
Min
60
2.0
Typ
64
2.8
6.2
0.065
0.070
13
1200
345
90
14
72
43
190
33
6.5
15
1.8
1.4
70
50
20
0.2
Max Unit
10
100
±100
V
mV/°C
mA
nA
4.0
0.075
0.082
V
mV/°C
W
Mhos
1680
480
180
pF
24 ns
118 ns
68 ns
320 ns
50 nC
2.5
V
ns
mC
http://onsemi.com
2


Part Number NTB25P06T4G
Description Power MOSFET
Maker ON Semiconductor
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