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  ON Semiconductor Electronic Components Datasheet  

NTB4302 Datasheet

Power MOSFET

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NTP4302, NTB4302
Power MOSFET
74 Amps, 30 Volts
N−Channel TO−220 and D2PAK
Features
Low RDS(on)
Higher Efficiency Extending Battery Life
Diode Exhibits High Speed, Soft Recovery
Avalanche Energy Specified
IDSS Specified at Elevated Temperature
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Typical Applications
DC−DC Converters
Low Voltage Motor Control
Power Management in Portable and Battery Powered Products: Ie:
Computers, Printers, Cellular and Cordless Telephones, and PCMCIA
Cards
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (RGS = 10 M)
Gate−to−Source Voltage
− Continuous
Drain Current
− Continuous @ TC = 25°C
− Continuous @ TC = 100°C
− Single Pulse (tpv10 µs)
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Temperature Range
VDSS
VDGR
VGS
30
30
"20
Vdc
Vdc
Vdc
ID
ID
IDM
PD
TJ, Tstg
74
47
175
80
0.66
−55 to
+150
Adc
Apk
W
W/°C
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 30 Vdc, VGS = 10 Vdc, L = 5.0 mH
IL(pk) = 17 A, VDS = 30 Vdc, RG = 25 )
EAS 722 mJ
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient (Note 1)
RθJC
RθJA
°C/W
1.55
70
Maximum Lead Temperature for Soldering
Purposes, 1/8from case for 10 seconds
TL 260 °C
1. When surface mounted to an FR4 Board using minimum recommended Pad
Size, (Cu Area 0.412 in2).
2. Current limited by internal lead wires.
http://onsemi.com
74 AMPERES
30 VOLTS
RDS(on) = 9.3 mMax
N−Channel
D
G
4
S
4
12
3
1
2
3
TO−220AB
CASE 221A
STYLE 5
D2PAK
CASE 418AA
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
NTx4302
LLYWW
NTx4302
LLYWW
1
Gate
3
Source
1 23
Gate Drain Source
2
Drain
x
NTx4302
LL
Y
WW
= P or B
= Device Code
= Location Code
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
NTP4302
NTB4302
TO−220AB
D2PAK
50 Units/Rail
50 Units/Rail
NTB4302T4
D2PAK
800/Tape & Reel
© Semiconductor Components Industries, LLC, 2003
October, 2003 − Rev. 1
1
Publication Order Number:
NTP4302/D


  ON Semiconductor Electronic Components Datasheet  

NTB4302 Datasheet

Power MOSFET

No Preview Available !

NTP4302, NTB4302
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
(VDS = VGS, ID = 250 µAdc)
www.DataSheet4UT.chormeshold Temperature Coefficient (Negative)
Static Drain−to−Source On−Resistance (Note 3)
(VGS = 10 Vdc, ID = 37 Adc)
(VGS = 10 Vdc, ID = 20 Adc)
(VGS = 4.5 Vdc, ID = 10 Adc)
VGS(th)
RDS(on)
Forward Transconductance (Note 3) (VDS = 10 Vdc, ID = 20 Adc)
gFS
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 24 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
Coss
Crss
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
td(on)
Rise Time
Turn−Off Delay Time
(VDD = 24 Vdc, ID = 20 Adc,
VGS = 10 Vdc, RG = 2.5 ) (Note 3)
tr
td(off)
Fall Time
tf
Turn−On Delay Time
td(on)
Rise Time
Turn−Off Delay Time
(VDD = 24 Vdc, ID = 10 Adc,
VGS = 4.5 Vdc, RG = 2.5 ) (Note 3)
tr
td(off)
Fall Time
tf
Gate Charge
(VDS = 24 Vdc, ID = 37 Adc,
VGS = 4.5 Vdc) (Note 3)
QT
Qgs
Qgd
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS = 20 Adc, VGS = 0 Vdc) (Note 3)
(IS = 20 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
Reverse Recovery Time
(IS = 20 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs) (Note 3)
trr
ta
tb
Reverse Recovery Stored Charge
3. Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
4. Switching characteristics are independent of operating junction temperatures.
QRR
Min Typ Max Unit
30 −
− 25
Vdc
− mV/°C
µAdc
− − 1.0
− − 10
±100
nAdc
Vdc
1.0 1.9 3.0
− −3.8 − mV/°C
m
− 6.8 9.3
6.8 9.3
9.5 12.5
− 40 − mhos
2050
2400
pF
− 640 800
− 225 310
− 10 18 ns
− 22 35
− 45 75
− 35 70
− 18 − ns
− 70 −
− 32 −
− 30 −
− 28 − nC
− 7.5 −
− 19 −
− 0.90 1.3 Vdc
− 0.75 −
− 37 − ns
− 21 −
− 16 −
− 0.035 −
µC
http://onsemi.com
2


Part Number NTB4302
Description Power MOSFET
Maker ON Semiconductor
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NTB4302 Datasheet PDF






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