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  ON Semiconductor Electronic Components Datasheet  

NTB45N06L Datasheet

N-Channel TO-220 and D2PAK

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NTP45N06L, NTB45N06L
Power MOSFET
45 Amps, 60 Volts, Logic Level,
N−Channel TO−220 and D2PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
www.DataSheet4U.Pcobm−Free Packages are Available
Higher Current Rating
Lower RDS(on)
Lower VDS(on)
Lower Capacitances
Lower Total Gate Charge
Tighter VSD Specification
Lower Diode Reverse Recovery Time
Lower Reverse Recovery Stored Charge
Typical Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
http://onsemi.com
45 AMPERES, 60 VOLTS
RDS(on) = 28 mW
N−Channel
D
G
S
MARKING
DIAGRAMS
4
Drain
4
TO−220
CASE 221A
STYLE 5
NTx45N06L
AYWW
1
2
3
1
Gate
3
Source
2
Drain
4
Drain
2
1
3
4
D2PAK
CASE 418B
STYLE 2
NTx45N06L
AYWW
2
1 Drain 3
Gate
Source
NTx45N06L = Device Code
x = P or B
A = Assembly Location
Y = Year
WW = Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2004
August, 2004 − Rev. 1
1
Publication Order Number:
NTP45N06L/D


  ON Semiconductor Electronic Components Datasheet  

NTB45N06L Datasheet

N-Channel TO-220 and D2PAK

No Preview Available !

NTP45N06L, NTB45N06L
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
60 Vdc
Drain−to−Gate Voltage (RGS = 10 MW)
VDGR
60 Vdc
Gate−to−Source Voltage
− Continuous
− Non−Repetitive (tpv10 ms)
Vdc
VGS "15
VGS "20
Drain Current
− Continuous @ TA = 25°C
− Continuous @ TA = 100°C
− Single Pulse (tpv10 ms)
ID 45 Adc
ID 30
IDM 150 Apk
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Total Power
www.DataSheet4UT.cootaml Power
Dissipation
Dissipation
@
@
TA
TA
=
=
25°C
25°C
(Note
(Note
1)
2)
PD 125 W
0.83 W/°C
3.2 W
2.4 W
Operating and Storage Temperature Range
TJ, Tstg
−55 to +175
°C
Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 5.0 Vdc, L = 0.3 mH
IL(pk) = 40 A, VDS = 60 Vdc, RG = 25 W)
EAS 240 mJ
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
RqJC
RqJA
RqJA
°C/W
1.2
46.8
63.2
Maximum Lead Temperature for Soldering Purposes, 1/8from case for 10 seconds
TL
260 °C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not
implied, damage may occur and reliability may be affected.
1. When surface mounted to an FR4 board using 1pad size, (Cu Area 1.127 in2).
2. When surface mounted to an FR4 board using the minimum recommended pad size, (Cu Area 0.412 in2).
ORDERING INFORMATION
Device
Package
Shipping
NTP45N06L
NTB45N06L
NTB45N06LG
TO−220
D2PAK
D2PAK
(Pb−Free)
50 Units/Rail
50 Units/Rail
50 Units/Rail
NTB45N06LT4
NTB45N06LT4G
D2PAK
D2PAK
(Pb−Free)
800 Tape & Reel
800 Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2


Part Number NTB45N06L
Description N-Channel TO-220 and D2PAK
Maker ON Semiconductor
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