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NTB5404N - Power MOSFET

Key Features

  • Low RDS(on).
  • High Current Capability.
  • Low Gate Charge.
  • AEC.
  • Q101 Qualified and PPAP Capable.
  • NVB5404N.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Full PDF Text Transcription for NTB5404N (Reference)

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NTB5404N, NTP5404N, NVB5404N Power MOSFET 40 V, 167 A, Single N−Channel, D2PAK & TO−220 Features • Low RDS(on) • High Current Capability • Low Gate Charge • AEC−Q101 Qual...

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ow RDS(on) • High Current Capability • Low Gate Charge • AEC−Q101 Qualified and PPAP Capable − NVB5404N • These Devices are Pb−Free and are RoHS Compliant Applications • Electronic Brake Systems • Electronic Power Steering • Bridge Circuits MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Units Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current − RqJC Steady TC = 25°C ID State TC = 100°C 167 A 118 Power Dissipation − RqJC Steady State TC = 25°C PD 254 W Continuous Drain Current − RqJA (Note 1) Steady TA = 25°C ID State TA = 100°C 24 A 17 Power Dissipation −

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