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NTB5405N - Power MOSFET

Key Features

  • Low RDS(on).
  • High Current Capability.
  • Low Gate Charge.
  • AEC.
  • Q101 Qualified and PPAP Capable.
  • NVB5405N.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Full PDF Text Transcription for NTB5405N (Reference)

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NTB5405N, NVB5405N Power MOSFET 40 V, 116 A, Single N−Channel, D2PAK Features • Low RDS(on) • High Current Capability • Low Gate Charge • AEC−Q101 Qualified and PPAP Capa...

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urrent Capability • Low Gate Charge • AEC−Q101 Qualified and PPAP Capable − NVB5405N • These Devices are Pb−Free and are RoHS Compliant Applications • Electronic Brake Systems • Electronic Power Steering • Bridge Circuits MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current − RqJC Power Dissipation − RqJC Steady State Steady State TC = 25°C TC = 100°C TC = 25°C Continuous Drain Current − RqJA (Note 1) Power Dissipation − RqJA (Note 1) Steady State Steady State TA = 25°C TA = 100°C TA = 25°C Pulsed Drain Current tp = 10 ms Ope

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