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NTB75N03-06 - Power MOSFET

Key Features

  • Ultra.
  • Low RDS(on), Single Base, Advanced Technology.
  • SPICE Parameters Available.
  • Diode is Characterized for Use in Bridge Circuits.
  • IDSS and VDS(on) Specified at Elevated Temperatures.
  • High Avalanche Energy Capability.
  • ESD JEDAC Rated HBM Class 1, MM Class B, CDM Class 0.
  • Pb.
  • Free Packages are Available Typical.

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Full PDF Text Transcription for NTB75N03-06 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NTB75N03-06. For precise diagrams, and layout, please refer to the original PDF.

NTP75N03−06, NTB75N03−06 Power MOSFET 75 Amps, 30 Volts N−Channel TO−220 and D2PAK This 20 VGS gate drive vertical Power MOSFET is a general purpose part that provides th...

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drive vertical Power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. This power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The Drain−to−Source Diode has a fast response with soft recovery.

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