NTBG014N120M3P Overview
Silicon Carbide (SiC) MOSFET EliteSiC, 14 mohm, 1200 V, M3P, D2PAK-7L NTBG014N120M3P.
NTBG014N120M3P Key Features
- Typ. RDS(on) = 14 mW
- Low Switching Losses (Typ. EON 1331 mJ at 74 A, 800 V)
- 100% Avalanche Tested
NTBG014N120M3P Datasheet Details
| Part number | NTBG014N120M3P |
|---|---|
| Datasheet | NTBG014N120M3P-ONSemiconductor.pdf |
| File Size | 325.34 KB |
| Manufacturer | onsemi |
| Description | SiC MOSFET |
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