NTBG020N090SC1 Datasheet - ON Semiconductor

SiC MOSFET

* Typ. RDS(on) = 20 mW @ VGS = 15 V

* Typ. RDS(on) = 16 mW @ VGS = 18 V

* Ultra Low Gate Charge (QG(tot) = 200 nC)

* Low Effective Output Capacitance (Coss = 295 pF)

* 100% Avalanche Tested

* This Device is Halide Free and RoHS Compliant with exemption

NTBG020N090SC1

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Sic mosfet.

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NTBG020N090SC1 SiC MOSFET ON Semiconductor

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