Datasheet Details
| Part number | NTBG020N120SC1 |
|---|---|
| Manufacturer | onsemi |
| File Size | 341.75 KB |
| Description | SiC MOSFET |
| Datasheet |
 NTBG020N120SC1 Datasheet
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Key Features
- Typ. RDS(on) = 20 mW.
- Ultra Low Gate Charge (QG(tot) = 220 nC).
- High Speed Switching with Low Capacitance (Coss = 258 pF).
- 100% Avalanche Tested.
- TJ = 175°C.
- This Device is Halide Free and RoHS Compliant with exemption 7a, Pb.
- Free 2LI (on second level interconnection) Typical.