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NTBL075N065SC1 Datasheet SiC MOSFET

Manufacturer: onsemi

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Overview

Silicon Carbide (SiC) MOSFET - EliteSiC, 56 mohm, 650 V, M2,.

Key Features

  • Typ. RDS(on) = 56 mW @ VGS = 18 V Typ. RDS(on) = 75 mW @ VGS = 15 V.
  • Ultra Low Gate Charge (QG(tot) = 59 nC).
  • Low Effective Output Capacitance (Coss = 109 pF).
  • 100% Avalanche Tested.
  • TJ = 175°C.
  • RoHS Compliant Typical.

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