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  ON Semiconductor Electronic Components Datasheet  

NTBLS1D7N08H Datasheet

N-Channel MOSFET

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MOSFET - Power, Single
N-Channel, TOLL
80 V, 1.7 mW, 203 A
NTBLS1D7N08H
Features
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
Lowers Switching Noise/EMI
These Devices are PbFree and are RoHS Compliant
Typical Applications
Power Tools, Battery Operated Vacuums
UAV/Drones, Material Handling
BMS/Storage, Home Automation
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
DraintoSource Voltage
VDSS
80
V
GatetoSource Voltage
VGS
±20
V
Continuous Drain
Current RqJC
(Notes 1, 3)
Power Dissipation
RqJC (Note 1)
TC = 25°C
ID
Steady TC = 100°C
State TC = 25°C
PD
TC = 100°C
203
A
143
167 W
83
Continuous Drain
Current RqJA
(Notes 1, 2, 3)
Power Dissipation
RqJA (Notes 1, 2)
TA = 25°C
ID
Steady TA = 100°C
State TA = 25°C
PD
TA = 100°C
29
A
21
3.5
W
1.7
Pulsed Drain Current TC = 25°C, tp = 100 ms IDM
1173 A
Operating Junction and Storage Temperature
Range
TJ, Tstg 55 to °C
+175
Source Current (Body Diode)
Single Pulse DraintoSource Avalanche
Energy (IL(pk) = 27 A)
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
IS
139
A
EAS 1093.5 mJ
TL
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
JunctiontoCase Steady State (Note 1)
JunctiontoAmbient Steady State
(Notes 1, 2)
RqJC
RqJA
0.9 °C/W
43
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surfacemounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
www.onsemi.com
V(BR)DSS
80 V
RDS(ON) MAX
1.7 mW @ 10 V
ID MAX
203 A
D
G
S
NCHANNEL MOSFET
TOLL
CASE 100CU
MARKING DIAGRAM
AYWWZZ
1D7N08H
1D7N08H = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
ZZ = Lot Traceability
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2019
1
January, 2021 Rev. 2
Publication Order Number:
NTBLS1D7N08H/D


  ON Semiconductor Electronic Components Datasheet  

NTBLS1D7N08H Datasheet

N-Channel MOSFET

No Preview Available !

NTBLS1D7N08H
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min Typ Max Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
DraintoSource Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/
TJ
VGS = 0 V, ID = 250 mA
80
57
V
mV/°C
Zero Gate Voltage Drain Current
GatetoSource Leakage Current
ON CHARACTERISTICS
IDSS
IGSS
VGS = 0 V,
VDS = 80 V
TJ = 25 °C
TJ = 125°C
VDS = 0 V, VGS = 20 V
10
mA
250
100
nA
Gate Threshold Voltage
Threshold Temperature Coefficient
DraintoSource On Resistance
VGS(TH)
VGS(TH)/TJ
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES & GATE RESISTANCE
VGS = VDS, ID = 479 mA
ID = 479 mA, ref to 25°C
VGS = 10 V
ID = 80 A
VGS = 6 V
ID = 43 A
VDS = 5 V, ID = 80 A
2.0
2.9
4.0
V
7.3
mV/°C
1.29 1.7
mW
1.76 2.6
271
S
Input Capacitance
CISS
7675
Output Capacitance
Reverse Transfer Capacitance
COSS
VGS = 0 V, f = 1 MHz, VDS = 40 V
1059
pF
CRSS
41
GateResistance
RG
0.6
Total Gate Charge
QG(TOT)
121
Threshold Gate Charge
GatetoSource Charge
QG(TH)
19
nC
QGS
VGS = 10 V, VDS = 40 V; ID = 80 A
32
GatetoDrain Charge
QGD
29
Plateau Voltage
VGP
4.5
V
Output Charge
QOSS
VGS = 0 V, VDD = 40 V
149
nC
SWITCHING CHARACTERISTICS (Note 4)
TurnOn Delay Time
td(ON)
Rise Time
tr
TurnOff Delay Time
td(OFF)
Fall Time
tf
DRAINSOURCE DIODE CHARACTERISTICS
VGS = 10 V, VDS = 40 V,
ID = 80 A, RG = 6 W
29
25
ns
89
35
Forward Diode Voltage
VSD
VGS = 0 V,
TJ = 25°C
IS = 80 A
TJ = 125°C
0.82 1.2
V
0.69
Reverse Recovery Time
Reverse Recovery Charge
tRR
QRR
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 43 A
73
ns
138
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Switching characteristics are independent of operating junction temperatures.
www.onsemi.com
2


Part Number NTBLS1D7N08H
Description N-Channel MOSFET
Maker ON Semiconductor
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