NTBS2D7N06M7 - N-Channel Power MOSFET

onsemi

Key Features

Typical RDS(on) = 2.2 mW at VGS = 10 V, ID = 80 A.
Typical Qg(tot) = 80 nC at VGS = 10 V, ID = 80 A.
UIS Capability.
These Devices are Pb.
Free and are RoHS Compliant.

NTBS2D7N06M7 n-channel power mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	NTBS2D7N06M7
Manufacturer	onsemi
File Size	241.65 KB
Description	N-Channel Power MOSFET
Datasheet	NTBS2D7N06M7 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
NTB0101	Dual supply translating transceiver	NXP
NTB0101A	Auto direction sensing dual supply	NXP
NTB0102	Dual supply translating transceiver	NXP
NTB0102-Q100	Dual supply translating transceiver	NXP
NTB0104	Dual supply translating transceiver	NXP

Other Datasheets by onsemi

Part Number	Description
NTB004N10G	100V 201A N-Channel Power MOSFET
NTB011N15MC	N-Channel MOSFET
NTB082N65S3F	Power MOSFET
NTB10N40	Power MOSFET
NTB150N65S3HF	N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

NTBS2D7N06M7 N‐Channel PowerTrench) MOSFET 60 V, 110 A, 2.7 mW Features • Typical RDS(on) = 2.