NTGD3148N mosfet equivalent, power mosfet.
*ăLow Threshold Levels, VGS(th) < 1.5 V
*ăLow Gate Charge (3.8 nC)
*ăLeading Edge Trench Technology of Low RDS(on)
*ăHigh Power and Current Handling Capa.
http://onsemi.com N-CHANNEL MOSFET
V(BR)DSS 20 V RDS(on) Max 70 mW @ 4.5 V 100 mW @ 2.5 V ID Max 3.5 A
*ăDC-DC Con.
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