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NTGS3446 - Power MOSFET

Features

  • Ultra Low RDS(on) Higher Efficiency Extending Battery Life Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified IDSS Specified at Elevated Temperature Pb.
  • Free Package is Available http://onsemi. com V(BR)DSS 20 V RDS(on) TYP ID MAX 5.1 A 36 mW @ 4.5 V.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NTGS3446 Power MOSFET 5.1 Amps, 20 Volts N−Channel TSOP−6 Features • • • • • • • Ultra Low RDS(on) Higher Efficiency Extending Battery Life Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified IDSS Specified at Elevated Temperature Pb−Free Package is Available http://onsemi.com V(BR)DSS 20 V RDS(on) TYP ID MAX 5.1 A 36 mW @ 4.5 V Applications • Power Management in portable and battery−powered products, i.e.
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