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NTH4L040N65S3F - N-Channel Power MOSFET

Description

SUPERFET III MOSFET is ON Semiconductor’s brand new high voltage super

junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.

Features

  • 700 V @ TJ = 150°C.
  • Typ. RDS(on) = 32 mW.
  • Ultra Low Gate Charge (Typ. Qg = 158 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 1366 pF).
  • 100% Avalanche Tested.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Datasheet Details

Part number NTH4L040N65S3F
Manufacturer ON Semiconductor
File Size 967.55 KB
Description N-Channel Power MOSFET
Datasheet download datasheet NTH4L040N65S3F Datasheet
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Full PDF Text Transcription

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MOSFET – Power, N-Channel, SUPERFET) III, FRFET) 650 V, 65 A, 40 mW NTH4L040N65S3F Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability. Features • 700 V @ TJ = 150°C • Typ. RDS(on) = 32 mW • Ultra Low Gate Charge (Typ.
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