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NTHD3133PF
Power MOSFET and Schottky Diode
-20 V, FETKYt, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFETt
Features
•ăLeadless SMD Package Featuring a MOSFET and Schottky Diode •ă40% Smaller than TSOP-6 Package •ăLeadless SMD Package Provides Great Thermal Characteristics •ăIndependent Pinout to each Device to Ease Circuit Design •ăTrench P-Channel for Low On Resistance •ăUltra Low VF Schottky •ăThese are Pb-Free Devices
Applications
•ăLi-Ion Battery Charging •ăHigh Side DC-DC Conversion Circuits •ăHigh Side Drive for Small Brushless DC Motors •ăPower Management in Portable, Battery Powered Products
MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Units
Drain-to-Source Voltage
VDSS
-20
V
Gate-to-Source Voltage
VGS
±8.