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  ON Semiconductor Electronic Components Datasheet  

NTHD5905T1 Datasheet

Power MOSFET

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NTHD5905T1
Power MOSFET
Dual P−Channel ChipFETt
3.0 Amps, 8 Volts
Features
Low RDS(on) for Higher Efficiency
Logic Level Gate Drive
Miniature ChipFET Surface Mount Package
Applications
Power Management in Portable and BatteryPowered Products; i.e.,
Cellular and Cordless Telephones and PCMCIA Cards
http://onsemi.com
DUAL PCHANNEL
3.0 AMPS, 8 VOLTS
RDS(on) = 90 mW
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Steady
Symbol 5 secs State
DrainSource Voltage
GateSource Voltage
Continuous Drain Current
(TJ = 150°C) (Note 1)
TA = 25°C
TA = 85°C
Pulsed Drain Current
Continuous Source Current
(Diode Conduction) (Note 1)
VDS 8.0
VGS "8.0
ID
"4.1
"2.9
"3.0
"2.2
IDM "10
IS 1.8 0.9
Maximum Power Dissipation
(Note 1)
TA = 25°C
TA = 85°C
Operating Junction and Storage
Temperature Range
PD
TJ, Tstg
2.1 1.1
1.1 0.6
55 to +150
1. Surface Mounted on 1x 1FR4 Board.
Unit
V
V
A
A
A
W
°C
S1
G1
S2
G2
D1
PChannel MOSFET
D2
PChannel MOSFET
ChipFET
CASE 1206A
STYLE 2
PIN CONNECTIONS
MARKING
DIAGRAM
D1 8
D1 7
D2 6
D2 5
1 S1
2 G1
3 S2
4 G2
1
2
3
4
8
7
6
5
A9 = Specific Device Code
ORDERING INFORMATION
Device
Package
Shipping
NTHD5905T1 ChipFET
3000/Tape & Reel
© Semiconductor Components Industries, LLC, 2005
February, 2005 Rev. XXX
1
Publication Order Number:
NTHD5905T1/D


  ON Semiconductor Electronic Components Datasheet  

NTHD5905T1 Datasheet

Power MOSFET

No Preview Available !

NTHD5905T1
THERMAL CHARACTERISTICS
Characteristic
Symbol
Typ
Maximum JunctiontoAmbient (Note 2)
t v 5 sec
Steady State
RthJA
50
90
Maximum JunctiontoFoot (Drain)
Steady State
RthJF
30
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Test Condition
Static
Gate Threshold Voltage
GateBody Leakage
Zero Gate Voltage Drain Current
VGS(th)
IGSS
IDSS
OnState Drain Current (Note 3)
DrainSource OnState Resistance (Note 3)
ID(on)
rDS(on)
Forward Transconductance (Note 3)
gfs
Diode Forward Voltage (Note 3)
VSD
Dynamic (Note 4)
Total Gate Charge
Qg
GateSource Charge
Qgs
GateDrain Charge
Qgd
TurnOn Delay Time
td(on)
Rise Time
tr
TurnOff Delay Time
td(off)
Fall Time
tf
SourceDrain Reverse Recovery Time
trr
2. Surface Mounted on 1x 1FR4 Board.
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
4. Guaranteed by design, not subject to production testing.
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "8.0 V
VDS = 6.4 V, VGS = 0 V
VDS = 6.4 V, VGS = 0 V,
TJ = 85°C
VDS v 5.0 V, VGS = 4.5 V
VGS = 4.5 V, ID = 3.0 A
VGS = 2.5 V, ID = 2.5 A
VGS = 1.8 V, ID = 1.0 A
VDS = 5.0 V, ID = 3.0 A
IS = 0.9 A, VGS = 0 V
VDS = 4.0 V, VGS = 4.5 V,
ID = 3.0 A
VDD = 4.0 V, RL = 4 W
ID ^ 1.0 A, VGEN = 4.5 V,
RG = 6 W
IF = 0.9 A, di/dt = 100 A/ms
Min
0.45
10
Max
60
110
40
Typ
0.075
0.110
0.150
7.0
0.8
5.5
0.5
1.5
10
45
30
10
30
Unit
°C/W
°C/W
Max Unit
"100
1.0
5.0
V
nA
mA
0.090
0.130
0.180
1.2
A
W
S
V
9.0 nC
15 ns
70
45
15
60
http://onsemi.com
2


Part Number NTHD5905T1
Description Power MOSFET
Maker ON Semiconductor
Total Page 8 Pages
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